Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy von ZALM, P. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

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Diversity and feasibility of direct bonding: a survey of a dedicated optical technology von Haisma, J, Spierings, B A, Biermann, U K, van Gorkum, A A

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Growth and characterization of atomic layer doping structures in Si von VAN GORKUM, A. A, NAKAGAWA, K, SHIRAKI, Y

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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy von Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.

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Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxy von NAKAGAWA, K, VAN GORKUM, A. A, SHIRAKI, Y

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Voids in epitaxial silicon films grown under different thermal conditions: void detection by thermal helium desorption von van Veen, A., Reader, A.H., Gravesteijn, D.J., van Gorkum, A.A.

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Photoluminescence from Si/Ge superlattices von MONTIE, E. A, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A, BULLE-LIEUWMA, C. W. T

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Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si von Gorkum, Aart A. van, Nakagawa, Kiyokazu, Shiraki, Yasuhiro

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Structural characterization of an Sb delta-doping layer in silicon von SLIJKERMAN, W. F. J, ZAGWIJN, P. M, VAN DER VEEN, J. F, VAN GORKUM, A. A, VAN DE WALLE, G. F

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Thermal stability of strained Si/Si1-xGex/Si structures von Walle, G F A van de, IJzendoorn, L J van, Gorkum, A A van, Heuvel, R A van den, Theunissen, A M L

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Classical calculations of CV profiles for atomic layer doping structures in silicon von van Gorkum, A.A., Yamaguchi, K.

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Longitudinal phonons in Si/Ge superlattices von Montie, E A, Walle, G F A van de, Gravesteijn, D J, Gorkum, A A van, Teesselink, W J O

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Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systems von MISHIMA, T, FREDRIKSZ, C. W, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN DEN HEUVEL, R. A, VAN GORKUM, A. A

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Spot reduction in electron guns using a selective prefocusing lens von VAN GORKUM, A. A, VAN DEN BROEK, M. H. L. M

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Design of a new retarding-field electron spectrometer for depth-selective conversion electron Mossbauer spectroscopy von Noort, H M van, Gorkum, A A van

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Performance and processing line integration of a silicon molecular beam epitaxy system von Van Gorkum, A.A., Van de Walle, G.F.A., Van den Heuvel, R.A., Gravesteijn, D.J., Fredriksz, C.W.

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Influence of layer thickness on nucleation in amorphous silicon thin films von Roorda, S., Kammann, D., Sinke, W.C., van de Walle, G.F.A., van Gorkum, A.A.

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Ga delta-doping layers in silicon von ZAGWIJN, P. M, EROKHIN, Y. N, SLIJKERMAN, W. F. J, VAN DER VEEN, J. F, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

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High‐brightness and high‐resolution RHEED system von van Gorkum, A. A., Smits, M. R. T., Larsen, P. K., Raue, R.

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Silicon molecular beam epitaxy von Gravesteijn, Dirk J., van De Walle, Gerjan F. A., van Gorkum, Aart A.

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