New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories von Furnemont, A., Rosmeulen, M., van der Zanden, K., Van Houdt, J., De Meyer, K., Maes, H.

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Reliability testing of InP HEMT's using electrical stress methods von van der Zanden, K., Schreurs, D.M.M.-P., Menozzi, R., Borgarino, M.

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Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications von Behet, M., van der Zanden, K., Borghs, G., Behres, A.

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Root Cause of Charge Loss in a Nitride-Based Localized Trapping Memory Cell von Furnemont, A., Rosmeulen, M., van der Zanden, K., Van Houdt, J., De Meyer, K., Maes, H.

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On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMTs von Menozzi, R., Borgarino, M., van der Zanden, K., Schreurs, D.

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Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory von GOVOREANU, B, WELLEKENS, D, HASPESLAGH, L, BRUNCO, D. P, DE VOS, J, RUIZ AGUADO, D, BLOMME, P, VAN DER ZANDEN, K, VAN HOUDT, J

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Circuit Design for Bias Compatibility in Novel FinFET-Based Floating-Body RAM von Poliakov, P., Anchlia, A., Bardon, M.G., Rooseleer, B., De Wachter, B., Collaert, N., van der Zanden, K., Dehaene, W., Verkest, D., Corbalan, M.M.

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Use of Al2O3 as inter-poly dielectric in a production proven 130 nm embedded Flash technology von KAKOSCHKE, R, PESCINI, L, POWER, J. R, VAN DER ZANDEN, K, ANDERSEN, E.-O, GONG, Y, ALLINGER, R

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Low-frequency drain current noise behavior of InP based MODFET's in the linear and saturation regime von Van Meer, H., Simoen, E., Valenza, M., Van Der Zanden, K., De Raedt, W.

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Metamorphic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on germanium substrates von van der Zanden, K., Schreurs, D., Mijlemans, P., Borghs, G.

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Improved HEMT model for low phase-noise InP-based MMIC oscillators von Schreurs, D., van Meer, H., van der Zanden, K., De Raedt, W., Nauwelaers, B., Van de Capelle, A.

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Low-frequency gate current noise of InP based HEMTs von Simoen, E., van Meer, H., Valenza, M., van der Zanden, K., De Raedt, W.

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Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs von Van Meer, H., Valenza, M., Van Der Zanden, K., De Raedt, W., Simeon, E., Schreurs, D., Kaufmann, L.

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Easy and accurate empirical transistor model parameter estimation from vectorial large-signal measurements von Schreurs, D., Verspecht, J., Vandenberghe, S., Carchon, G., van der Zanden, K., Nauwelaers, B.

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HEMT parameter extraction combining optimization and direct parasitic extraction von Vandenberghe, S., Schreurs, D., Van der Zanden, K., Carchon, G., Nauwelaers, B., De Raedt, W.

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Use of Al 2O 3 as inter-poly dielectric in a production proven 130 nm embedded Flash technology von Kakoschke, R., Pescini, L., Power, J.R., van der Zanden, K., Andersen, E.-O., Gong, Y., Allinger, R.

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DC, LF dispersion and hf characterisation of short time stressed inp based LM-HEMTS von Schreurs, D., Spiers, A., De Raedt, W., van der Zanden, K., Baeyens, Y., van Hove, M., Nauwelaers, B., van Rossum, M.

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Performance and reliability of HfAlO x -based interpoly dielectrics for floating-gate Flash memory von Govoreanu, B., Wellekens, D., Haspeslagh, L., Brunco, D.P., De Vos, J., Aguado, D. Ruiz, Blomme, P., van der Zanden, K., Van Houdt, J.

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Al2O3 Based Flash Interpoly Dielectrics: a Comparative Retention Study von Wellekens, D., Blomme, P., Govoreanu, B., De Vos, J., Haspeslagh, L., Van Houdt, J., Brunco, D.P., van der Zanden, K.

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Circuit Design for Bias Compatibility Investigation of Bulk FinFET Based Floating Body RAM von Anchlia, A., Garcia Bardon, M., Poliakov, P., Rooseleer, B., De Wachter, B., Collaert, N., van der Zanden, K., Corbalan, M. Miranda, Dehaene, W., Verkest, D.

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