Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs von Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Hearne, H., Ezis, A., Sherwin, M.E., Clarke, R.C., Singh, R.

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Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion von Van Campen, Stephen, McNutt, Ty, Sherwin, Marc, Singh, Ranbir, Walden, Ginger G., Howell, Rob

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A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature von Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Ezis, A., Nechay, B., Kirby, C.F., Sherwin, M.E., Clarke, R.C., Singh, R.

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Electron emission from silicon tip arrays controlled by np junction minority carrier injection von Young, Robert M., Nathanson, Harvey C., Howell, Robert S., Stewart, Eric J., Nechay, Bettina A., Braggins, Timothy T., Graves, Eric M., Van Campen, Stephen D., Clarke, R. Christopher, Miserendino, Scott B., Hawk, Jonathan

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10 kV Silicon Carbide Junction Barrier Schottky Rectifier von McNutt, Ty, Kirby, Chris, Singh, Ranbir, Van Campen, Stephen, Walker, Andy, Sherwin, Marc, Hearne, Harold, Ha, Kathy

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A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature : Silicon carbide devices and technology von HOWELL, Robert S, BUCHOFF, Steven, VAN CAMPEN, Stephen, MCNUTT, Ty R, EZIS, Andris, NECHAY, Bettina, KIRBY, Christopher F, SHERWIN, Marc E, CLARKE, R. Chris, SINGH, Ranbir

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Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs : Silicon carbide devices and technology von HOWELL, Robert S, BUCHOFF, Steven, VAN CAMPEN, Stephen, MCNUTT, Ty R, HEARNE, Harold, EZIS, Andris, SHERWIN, Marc E, CLARKE, R. Chris, SINGH, Ranbir

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Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter von McNutt, Ty, Clarke, Chris, McCoy, Megan, Bulgher, Dave, Stewart, Eric J., Reichl, John, Van Campen, Stephen, Veliadis, Victor, Geil, Bruce, Scozzie, Skip, Hearne, Harold, Katsis, Dimos

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IMPROVED POWER SWITCHING TRANSISTORS von McNUTT, Ty, R, CLARKE, Rowland, C, VAN CAMPEN, Stephen, SINGH, Ranbir, SHERWIN, Marc, E, STEWART, Eric

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Vertically integrated dual gate transistor structure and method of making same von Stewart, Eric J, Van Campen, Stephen, Clarke, Rowland C

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Vertically integrated dual gate transistor structure and method of making same von STEWART ERIC J, VAN CAMPEN STEPHEN, CLARKE ROWLAND C

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IMPROVED POWER SWITCHING TRANSISTORS von SINGH, RANBIR, STEWART, ERIC, CLARKE, ROWLAND, C, MCNUTT, TY, R, VAN CAMPEN, STEPHEN, SHERWIN, MARC, E

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Electron emission from silicon tip arrays controlled by n p junction minority carrier injection von Young, Robert M., Nathanson, Harvey C., Howell, Robert S., Stewart, Eric J., Nechay, Bettina A., Braggins, Timothy T., Graves, Eric M., Van Campen, Stephen D., Clarke, R. Christopher, Miserendino, Scott B., Hawk, Jonathan

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Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25-200 °C operating temperatures von Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T., Nechay, B., Sherwin, M., Singh, R.

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Silicon carbide JFET cascode switch for power conditioning applications von McNutt, T., Veliadis, V., Stewart, E., Hearne, H., Reichl, J., Oda, P., Van Campen, S., Ostop, J., Clarke, C.R.

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Power switching transistors von MCNUTT TY R, STEWART ERIC J, VAN CAMPEN STEPHEN, SHERWIN MARC E, SINGH RANBIR, CLARKE ROWLAND C

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Power switching transistors von McNutt, Ty R, Stewart, Eric J, Clarke, Rowland C, Singh, Ranbir, Van Campen, Stephen, Sherwin, Marc E

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Cascode power switch topologies von McNutt, Ty R, Reichl, John V, Heame, III, Harold C, Stewart, Eric J, Van Campen, Stephen D, Veliadis, Victor D

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IMPROVED POWER SWITCHING TRANSISTORS von SINGH, RANBIR, STEWART, ERIC, CLARKE, ROWLAND, C, MCNUTT, TY, R, VAN CAMPEN, STEPHEN, SHERWIN, MARC, E

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IMPROVED POWER SWITCHING TRANSISTORS von SINGH, RANBIR, STEWART, ERIC, CLARKE, ROWLAND, C, MCNUTT, TY, R, VAN CAMPEN, STEPHEN, SHERWIN, MARC, E

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