Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa/Metal-Gate nFinFETs for High-Performance Logic Applications von Maitra, K, Khakifirooz, A, Kulkarni, P, Basker, V S, Faltermeier, J, Jagannathan, H, Adhikari, H, Chun-Chen Yeh, Klymko, N R, Saenger, K, Standaert, T, Miller, R J, Doris, B, Paruchuri, V K, McHerron, D, O'Neil, J, Leobundung, E, Huiming Bu

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The effect of cosurfactants on sodium dodecyl sulfate micellar structures at a graphite surface von Paruchuri, Vamsi K., Nalaskowski, Jakub, Shah, Dinesh O., Miller, Jan D.

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Hafnium oxide gate dielectrics on sulfur-passivated germanium von Frank, Martin M., Koester, Steven J., Copel, Matthew, Ott, John A., Paruchuri, Vamsi K., Shang, Huiling, Loesing, Rainer

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Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate Stack von MANABE, Kenzo, WATANABE, Koji, JAGANNATHAN, Hemanth, PARUCHURI, Vamsi K

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The significance of electrokinetic characterization for interpreting interfacial phenomena at planar, macroscopic interfaces von KEQING FA, PARUCHURI, Vamsi K, BROWN, Scott C, MOUDGIL, Brij M, MILLER, Jan D

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Adsorption Density of Spherical Cetyltrimethylammonium Bromide (CTAB) Micelles at a Silica/Silicon Surface von Paruchuri, Vamsi K., Fa, Keqing, Moudgil, Brij M., Miller, Jan D.

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SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition von Jamison, Paul C., Tsunoda, Takaaki, Tuan Anh Vo, Juntao Li, Jagannathan, Hemanth, Shinde, Sanjay R., Paruchuri, Vamsi K., Gall, Daniel

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Optimized broadcast protocol for sensor networks von Durresi, A., Paruchuri, V.K., Iyengar, S.S., Kannan, R.

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Mechanism for Leakage Reduction by La Incorporation in a \hbox\hbox\hbox Gate Stack von Manabe, K., Watanabe, K., Jagannathan, H., Paruchuri, V. K.

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Zeta-potentials of self-assembled surface micelles of ionic surfactants adsorbed at hydrophobic graphite surfaces von Paruchuri, Vamsi K., Nguyen, Anh V., Miller, Jan D.

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Phenomena of Dielectric Capping Layer Insertion into High-κ Metal Gate Stacks in Gate-First/Gate-Last Integration von Jagannathan, Hemanth, Jamison, Paul, Paruchuri, Vamsi K.

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Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- [Formula Omitted]/Metal-Gate nFinFETs for High-Performance Logic Applications von Maitra, Kingsuk, Khakifirooz, Ali, Kulkarni, Pranita, Basker, Veeraraghavan S, Faltermeier, Jonathan, Jagannathan, Hemanth, Adhikari, Hemant, Yeh, Chun-Chen, Klymko, Nancy R, Saenger, Katherine, Standaert, Theodorus, Miller, Robert J, Doris, Bruce, Paruchuri, Vamsi K, McHerron, Dale, O'Neil, James, Leobundung, Effendi, Bu, Huiming

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Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully Depleted SOI MOSFET Structures von Loubet, Nicolas, Nagumo, Toshiharu, Adam, Thomas, Liu, Qing, Raymond, Mark, Cheng, Kangguo, Khakifirooz, Ali, Zhu, Zhengmao, Khare, Prasanna, Paruchuri, Vamsi K., Doris, Bruce, Sampson, Ron

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Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition von Jagannathan, Hemanth, Edge, Lisa F., Jamison, Paul, Iijima, Ryosuke, Narayanan, Vijay, Paruchuri, Vamsi K., Clark, Robert, Consiglio, Steven, Wajda, Cory, Leusink, Gert

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Replacement gate electrode with multi-thickness conductive metallic nitride layers von Jagannathan Hemanth, Paruchuri Vamsi K

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Electrical and Materials Characterization of Reactive and Co-Sputtered Tantalum Carbide Metal Electrodes for High-K Gate Applications von Edge, Lisa F., Vo, Tuan, Kellock, Andrew J., Linder, Barry P., Bruley, John, Zhu, Yu, DeHaven, Patrick, Paruchuri, Vamsi K., Tsunoda, Takaaki, Venkateshan, Aarthi, Shinde, Sanjay R.

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Self-forming barrier for subtractive copper von Standaert, Theodorus E, Paruchuri, Vamsi K

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Hybrid modeling of power system using hybrid Petri nets von Paruchuri, V.K., Davari, A., Feliachi, A.

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Replacement gate electrode with multi-thickness conductive metallic nitride layers von PARUCHURI VAMSI K, JAGANNATHAN HEMANTH

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SELF-FORMING BARRIER FOR SUBTRACTIVE COPPER von Standaert Theodorus E, Paruchuri Vamsi K

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