Effects of moisture and redox reactions in VCM and ECM resistive switching memories von Valov, Ilia, Tsuruoka, Tohru

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Memristors with alloyed electrodes von Valov, Ilia, Yang, Yuchao

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Multibit memory operation of metal-oxide bi-layer memristors von Stathopoulos, Spyros, Khiat, Ali, Trapatseli, Maria, Cortese, Simone, Serb, Alexantrou, Valov, Ilia, Prodromakis, Themis

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Nanoscale electrochemistry using dielectric thin films as solid electrolytes von Valov, Ilia, Lu, Wei D

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Switching kinetics of electrochemical metallization memory cells von Menzel, Stephan, Tappertzhofen, Stefan, Waser, Rainer, Valov, Ilia

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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics von Yang, Yuchao, Gao, Peng, Li, Linze, Pan, Xiaoqing, Tappertzhofen, Stefan, Choi, ShinHyun, Waser, Rainer, Valov, Ilia, Lu, Wei D.

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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires von Milano, Gianluca, Porro, Samuele, Valov, Ilia, Ricciardi, Carlo

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Electrochemical processes and device improvement in conductive bridge RAM cells von Goux, Ludovic, Valov, Ilia

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Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories von Tappertzhofen, Stefan, Valov, Ilia, Tsuruoka, Tohru, Hasegawa, Tsuyoshi, Waser, Rainer, Aono, Masakazu

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Silicon Oxide (SiOx): A Promising Material for Resistance Switching? von Mehonic, Adnan, Shluger, Alexander L., Gao, David, Valov, Ilia, Miranda, Enrique, Ielmini, Daniele, Bricalli, Alessandro, Ambrosi, Elia, Li, Can, Yang, J. Joshua, Xia, Qiangfei, Kenyon, Anthony J.

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Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches von Tsuruoka, Tohru, Terabe, Kazuya, Hasegawa, Tsuyoshi, Valov, Ilia, Waser, Rainer, Aono, Masakazu

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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices von Lübben, Michael, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Dimitrakis, Panagiotis, Valov, Ilia

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Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures von Tsuruoka, Tohru, Valov, Ilia, Tappertzhofen, Stefan, van den Hurk, Jan, Hasegawa, Tsuyoshi, Waser, Rainer, Aono, Masakazu

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Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities von Milano, Gianluca, Luebben, Michael, Ma, Zheng, Dunin-Borkowski, Rafal, Boarino, Luca, Pirri, Candido F., Waser, Rainer, Ricciardi, Carlo, Valov, Ilia

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Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs) von Valov, Ilia

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Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots von Nayak, Alpana, Unayama, Satomi, Tai, Seishiro, Tsuruoka, Tohru, Waser, Rainer, Aono, Masakazu, Valov, Ilia, Hasegawa, Tsuyoshi

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Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces von Valov, Ilia, Sapezanskaia, Ina, Nayak, Alpana, Tsuruoka, Tohru, Bredow, Thomas, Hasegawa, Tsuyoshi, Staikov, Georgi, Aono, Masakazu, Waser, Rainer

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Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films von Berg, Fenja, Kopperberg, Nils, Lübben, Jan, Valov, Ilia, Wu, Xiaochao, Simon, Ulrich, Böttger, Ulrich

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Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide von Tappertzhofen, Stefan, Mündelein, Hans, Valov, Ilia, Waser, Rainer

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Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices von Leonetti, Giuseppe, Fretto, Matteo, Pirri, Fabrizio Candido, De Leo, Natascia, Valov, Ilia, Milano, Gianluca

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