Line Width Roughness mitigation in chemically amplified resist by post-litho processes von Vaglio Pret, Alessandro, Gronheid, Roel

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Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in nand Flash Arrays von Poliakov, P., Blomme, P., Pret, A. V., Corbalan, M. M., Gronheid, R., Verkest, D., Van Houdt, J., Dehaene, W.

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A Physics-based Model for Negative Tone Development Materials von Fang, Chao, Smith, Mark D., Robertson, Stewart, Biafore, John J., Pret, Alessandro Vaglio

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Impact of pupil plane filtering on mask roughness transfer von Baylav, Burak, Maloney, Chris, Levinson, Zac, Bekaert, Joost, Vaglio Pret, Alessandro, Smith, Bruce W.

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Mask roughness impact on extreme UV and 193 nm immersion lithography von GARIDIS, Konstantinos, VAGLIO PRET, Alessandro, GRONHEID, Roel

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Three Litho-Process-Litho Approaches for 2D Double Patterning at the 32nm Half Pitch Node von Wong, Patrick, Gronheid, Roel, Wiaux, Vincent, Pret, Alessandro Vaglio, Verhaegen, Sta, Vandenbroeck, Nadia

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Evidence of speckle in extreme-UV lithography von Pret, Alessandro Vaglio, Gronheid, Roel, Engelen, Jan, Yan, Pei-Yang, Leeson, Michael J, Younkin, Todd R

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Mask roughness impact on extreme UV and 193nm immersion lithography von Garidis, Konstantinos, Pret, Alessandro Vaglio, Gronheid, Roel

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Linking EUV lithography line edge roughness and 16 nm NAND memory performance von VAGLIO PRET, Alessandro, POLIAKOV, Pavel, GRONHEID, Roel, BLOMME, Pieter, CORBALAN, Miguel Miranda, DEHAENE, Wim, VERKEST, Diederik, VAN HOUDT, Jan, BIANCHI, Davide

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Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories von Poliakov, Pavel, Blomme, Pieter, Pret, Alessandro Vaglio, Corbalan, Miguel Miranda, Gronheid, Roel, Verkest, Diederik, Houdt, Jan Van, Dehaene, Wim

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2D and 3D photoresist line roughness characterization von Vaglio Pret, Alessandro, Kunnen, Eddy, Gronheid, Roel, Pargon, Erwine, Luere, Olivier, Bianchi, Davide

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Contact edge roughness metrology in nanostructures: Frequency analysis and variations von Vijaya-Kumar, M.K., Constantoudis, Vassilios, Gogolides, Evangelos, Pret, Alessandro Vaglio, Gronheid, Roel

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Mask line roughness contribution in EUV lithography von Vaglio Pret, Alessandro, Gronheid, Roel

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Mask Effects on Resist Variability in Extreme Ultraviolet Lithography von Pret, Alessandro Vaglio, Gronheid, Roel, Engelen, Jan, Yan, Pei-Yang, Leeson, Michael J, Younkin, Todd R, Garidis, Konstantinos, Biafore, John

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On the origin and evolution of hotspots in multipatterning processes von Panneerchelvam, Prem, Huard, Chad M., Graves, Trey, Pret, Alessandro Vaglio, Gronheid, Roel, Agarwal, Ankur, Smith, Mark D.

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Evolution of lithography-to-etch bias in multi-patterning processes von Panneerchelvam, Prem, Agarwal, Ankur, Huard, Chad M., Pret, Alessandro Vaglio, Mani, Antonio, Gronheid, Roel, Demand, Marc, Kumar, Kaushik, Paolillo, Sara, Lazzarino, Frederic

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The Influence of H sub(2) Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition von De Schepper, Peter, el Otell, Ziad, Vaglio Pret, Alessandro, Altamirano-Sanchez, Efrain, De Gendt, Stefan

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The Influence of H 2 Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition: The Influence of H 2 Plasma Treatment on LWR Mitigation von De Schepper, Peter, el Otell, Ziad, Vaglio Pret, Alessandro, Altamirano-Sanchez, Efrain, De Gendt, Stefan

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The Influence of H-2 Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition von De Schepper, Peter, Z el Otell, Ziad, Pret, Alessandro Vaglio, Altamirano-Sanchez, Efrain, De Gendt, Stefan

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The Influence of H2 Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition von De Schepper, Peter, el Otell, Ziad, Vaglio Pret, Alessandro, Altamirano-Sanchez, Efrain, De Gendt, Stefan

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