Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes von Kawaguchi, Yoshinobu, Tani, Yoshihiko, Vaccaro, Pablo O, Ito, Shigetoshi, Kawanishi, Hidenori

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Strain-driven self-positioning of micromachined structures von Vaccaro, Pablo O., Kubota, Kazuyoshi, Aida, Tahito

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Optical actuation of micromirrors fabricated by the micro-origami technique von Zanardi Ocampo, José M., Vaccaro, Pablo O., Fleischmann, Thomas, Wang, Te-Sheng, Kubota, Kazuyoshi, Aida, Tahito, Ohnishi, Toshiaki, Sugimura, Akira, Izumoto, Ryo, Hosoda, Makoto, Nashima, Shigeki

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Electric Field Induced Carrier Sweep-Out in Tandem InGaN Multi-Quantum-Well Self-Pulsating Laser Diodes von Kawaguchi, Yoshinobu, Tani, Yoshihiko, Vaccaro, Pablo O., Ito, Shigetoshi, Kawanishi, Hidenori

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Ring and axis mode lasing in quasi-stadium laser diodes with concentric end mirrors von Fukushima, Takehiro, Harayama, Takahisa, Davis, Peter, Vaccaro, Pablo O, Nishimura, Takehiro, Aida, Tahito

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Lateral wet oxidation of AlAs layer in GaAs/AlAs heterostructures grown by MBE on GaAs (n 1 1)A substrates von Koizumi, Kazuhisa, Vaccaro, Pablo O, Fujita, Kazuhisa, Tateuchi, Mitsuru, Ohachi, Tadashi

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Blue Laser Diodes Fabricated on m -Plane GaN Substrates von Tsuda, Yuhzoh, Ohta, Masataka, Vaccaro, Pablo O., Ito, Shigetoshi, Hirukawa, Shuichi, Kawaguchi, Yoshinobu, Fujishiro, Yoshie, Takahira, Yoshiyuki, Ueta, Yoshihiro, Takakura, Teruyoshi, Yuasa, Takayuki

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Growth by molecular-beam epitaxy and photoluminescence of InGaAs/GaAs quantum wells on GaAs (111)A substrates von Vaccaro, Pablo O., Takahashi, Mitsuo, Fujita, Kazuhisa, Watanabe, Toshihide

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Characterization of GaAs-based micro-origami mirrors by optical actuation von OCAMPO, José M, VACCARO, Pablo O, NASHIMA, Shigeki, KUBOTA, Kazuyoshi, FLEISCHMANN, Thomas, WANG, Te-Sheng, AIDA, Tahito, OHNISHI, Toshiaki, SUGIMURA, Akira, IZUMOTO, Ryo, HOSODA, Makoto

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Characterization of GaAs-based micro-origami mirrors by optical actuation von Zanardi Ocampo, José M., Vaccaro, Pablo O., Kubota, Kazuyoshi, Fleischmann, Thomas, Wang, Te-Sheng, Aida, Tahito, Ohnishi, Toshiaki, Sugimura, Akira, Izumoto, Ryo, Hosoda, Makoto, Nashima, Shigeki

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Spontaneous formation of nanostructures in InxGa1-xAs epilayers grown by molecular beam epitaxy on GaAs non-(100)-oriented substrates von VACCARO, P. O, FUJITA, K, WATANABE, T

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Quasi-stadium laser diodes with an unstable resonator condition von Fukushima, Takehiro, Harayama, Takahisa, Davis, Peter, Vaccaro, Pablo O, Nishimura, Takehiro, Aida, Tahito

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A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates von Vaccaro, Pablo O., Ohnishi, Hajime, Fujita, Kazuhisa

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Physics and characteristics of a lateral p–n junction tunneling transistor von Vyurkov, Vladimir, Ryzhii, Victor, O. Vaccaro, Pablo, Aida, Tahito

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Growth and characterization of vertical-cavity surface-emitting lasers grown on (311)A-oriented GaAs substrates by molecular beam epitaxy von TAKAHASHI, M, VACCARO, P. O, WATANABE, T, MUKAIHARA, T, KOYAMA, F, IGA, K

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Lateral-junction vertical-cavity surface-emitting laser grown by molecular-beam epitaxy on a GaAs (311) A-oriented substrate von Vaccaro, Pablo O., Ohnishi, Hajime, Fujita, Kazuhisa

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Strain Reduction and Long Wavelength Emission from InAs/GaAs Quamtum Dots by Using Growth Interruption in Molecular Beam Epitaxy von Saravanan, Shanmugam, Shimizu, Hitoshi, Vaccaro, Pablo O.

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Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate von Ocampo, José M. Zanardi, Vaccaro, Pablo O., Saravanan, Shanmugam, Kubota, Kazuyoshi, Aida, Tahito

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High-frequency performance of lateral p-n junction photodiodes von Tsutsui, N., Ryzhii, V., Khmyrova, I., Vaccaro, P.O., Taniyama, H., Aida, T.

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Self-Assembly of Microstage Using Micro-Origami Technique on GaAs von Kubota, Kazuyoshi, Fleischmann, Thomas, Saravanan, Shanmugam, Vaccaro, Pablo O., Aida, Tahito

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