Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment von Pilipenko, U. A., Sergeichik, A. A., Shestovski, D. V., Solodukha, V. A.

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Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics von Solodukha, V. A., Pilipenko, U. A., Omelchenko, A. A., Shestovski, D. V.

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Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts von Pilipenko, V. A., Solodukha, V. A., Kovalchuk, N. S., Solovjov, J. A., Shestovski, D. V., Zhyhulin, D. V.

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Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method von Kovalchuk, N. S., Omelchenko, A. A., Pilipenko, V. A., Solodukha, V. A., Demidovich, S. V., Kolos, V. V., Filipenia, V. A., Shestovski, D. V.

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Formation of a gate dielectric of nanometer thickness by rapid thermal treatment von Kovalchuk, N. S., Omelchenko, A. A., Pilipenko, V. A., Solodukha, V. A., Shestovski, D. V.

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Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy von Lutsenko, E.V., Rzheutski, M.V., Vainilovich, A.G., Svitsiankou, I.E., Nagorny, A.V., Shulenkova, V.A., Yablonskii, G.P., Alekseev, A.N., Petrov, S.I., Solov'ev, Ya.A., Pyatlitski, A.N., Zhigulin, D.V., Solodukha, V.A.

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Reliability Express Control of the Gate Dielectric of Semiconductor Devices von Solodukha, V. A., Chigir, G. G., Pilipenko, V. A., Filipenya, V. A., Gorushko, V. A.

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DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD von Solodukha, V. A., Belous, A. I., Chyhir, G. G.

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Influence of Fast Thermal Treatment on the Electrophysical Properties of Silicon Dioxide von Pilipenko, V. A., Solodukha, V. A., Gorushko, V. A.

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Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide von V. A. Solodukha, V. A. Pilipenko, V. A. Gorushko

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Influence of rapid thermal treatment of the gate dielectric on the parameters of power field МОSFЕТ transistors von V. A. Solodukha, U. A. Pilipenko, V. A. Gorushko

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Features of phase transformations in a Ni^sub V^-Pt-Si system during stationary stepped annealing von Chaplanov, A M, Markevich, M I, Malyshko, A N, Shcherbakova, Ye N, Solodukha, V A, Turtsevich, A S, Solovyov, Ya A, Sarychev, O E

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Features of phase transformations in a NiV–Pt–Si system during stationary stepped annealing von Chaplanov, A. M., Markevich, M. I., Malyshko, A. N., Shcherbakova, Ye. N., Solodukha, V. A., Turtsevich, A. S., Solovyov, Ya. A., Sarychev, O. E.

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Features of phase transformations in a Ni V –Pt–Si system during stationary stepped annealing von Chaplanov, A. M., Markevich, M. I., Malyshko, A. N., Shcherbakova, Ye. N., Solodukha, V. A., Turtsevich, A. S., Solovyov, Ya. A., Sarychev, O. E.

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Identification of nickel silicide phases on a silicon surface from Raman spectra von Solodukha, V. A., Turtsevich, A. S., Solovyev, Ya. A., Sarychev, O. E., Gaponenko, S. V., Milchanin, O. V.

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Formation of the nickel-platinum alloy silicide Schottky barriers von Solodukha, V. A., Turtsevich, A. S., Solov’ev, Ya. A., Komarov, F. F., Mil’chanin, O. V., Kovaleva, T. B., Gaponenko, S. V.

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Initial stage of semiinsulating polycrystalline silicon film growth von Turtsevich, A. S., Nalivaiko, O. Yu, Solodukha, V. A., Glukhmanchuk, V. V., Tsirkunova, N. G., Lepeshkevich, G. V.

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Analysis and Characterization of the Report on Payments in Favor of the State on the Example of Extractive Companies von Oleksich, Zhanna A., Solodukha, Mariia V.

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Reduction of LSB detectors set with definite reliability von Solodukha, R.A., Perminov, G.V., Atlasov, I.V.

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Structural Contradiction of Economic Growth as a Threat to the Human Capital Reproduction Process in Russia von Solodukha, Petr V, Vasiutina, Ekaterina S, Korolkova, Nataliya A, Erokhin, Sergey G, Starostenko, Vladimir K, Matraeva, Liliia V

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