Test strategies for industrial testers for converter controls equipment von Oleniuk, P., Cosmo, M. Di, Kasampalis, V., Nisbet, D., Todd, B., Uznański, S.

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Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate von Serre, S., Semikh, S., Uznanski, S., Autran, J. L., Munteanu, D., Gasiot, G., Roche, P.

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Development of radiation tolerant components for the Quench Protection System at CERN von Bitterling, O., Denz, R., Steckert, J., Uznanski, S.

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Radiation tolerant power converter controls von Todd, B, Dinius, A, King, Q, Uznanski, S

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Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level von Autran, J.L., Munteanu, D., Roche, P., Gasiot, G., Martinie, S., Uznanski, S., Sauze, S., Semikh, S., Yakushev, E., Rozov, S., Loaiza, P., Warot, G., Zampaolo, M.

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Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM von Martinie, S, Autran, J L, Uznanski, S, Roche, P, Gasiot, G, Munteanu, D, Sauze, S

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Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops von Uznanski, S, Gasiot, G, Roche, P, Tavernier, C, Autran, Jean-Luc

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A GPU/CUDA implementation of the collection-diffusion model to compute SER of large area and complex circuits von Autran, J L, Uznanski, S, Martinie, S, Roche, P, Gasiot, G, Munteanu, D

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Energy Dependence of Tungsten-Dominated SEL Cross Sections von Alia, Ruben Garcia, Brugger, Markus, Danzeca, Salvatore, Ferlet-Cavrois, Veronique, Poivey, Christian, Roed, Ketil, Saigne, Fraedaeric, Spiezia, Giovanni, Uznanski, Slawosz, Saigne, Frederic

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Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation von Martinie, S, Uznanski, S, Autran, J L, Roche, P, Gasiot, G, Munteanu, D, Sauze, S, Loaiza, P, Warot, G, Zampaolo, M

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Combining GEANT4 and TIARA for Neutron Soft Error-Rate Prediction of 65 nm Flip-Flops von Uznanski, S., Gasiot, G., Roche, P., Semikh, S., Autran, J-L

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Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop von Uznanski, S, Gasiot, G, Roche, P, Autran, J, Ferlet-Cavrois, V

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Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology von Uznanski, S., Gasiot, G., Roche, P., Autran, J., Dugoujon, L.

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Real-time Soft-Error testing of 40nm SRAMs von Autran, J. L., Serre, S., Munteanu, D., Martinie, S., Semikh, S., Sauze, S., Uznanski, S., Gasiot, G., Roche, P.

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Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates von Gasiot, G., Glorieux, M., Uznanski, S., Clerc, S., Roche, P.

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SEE test and modeling results on 45nm SRAMs with different well strategies von Gasiot, G, Uznanski, S, Roche, P

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Radiation Risks and Mitigation in Electronic Systems von Todd, B, Uznanski, S

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A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling von Roche, P., Gasiot, G., Uznanski, S., Daveau, J., Torras-Flaquer, J., Clerc, S., Harboe-Sorensen, R.

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GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate von Serre, S., Semikh, S., Uznanski, S., Autran, J. L., Munteanu, D., Gasiot, G., Roche, P.

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Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM von Martinie, S., Autran, J. L., Sauze, S., Munteanu, D., Uznanski, S., Roche, P., Gasiot, G.

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