Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells von Ivanov, Ruslan, Marcinkevičius, Saulius, Uždavinys, Tomas K., Kuritzky, Leah Y., Nakamura, Shuji, Speck, James S.

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy von Marcinkevičius, Saulius, Uždavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

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Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy von Mensi, Mounir, Ivanov, Ruslan, Uždavinys, Tomas K, Kelchner, Kathryn M, Nakamura, Shuji, DenBaars, Steven P, Speck, James S, Marcinkevičius, Saulius

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Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence von Uždavinys, Tomas K., Becerra, Daniel L., Ivanov, Ruslan, DenBaars, Steven P., Nakamura, Shuji, Speck, James S., Marcinkevičius, Saulius

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy von Marcinkevicius, Saulius, Uzdavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

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Multimode scanning near-field photoluminescence spectroscopy and its application for studies of ingan epitaxial layers and quantum wells von Marcinkevičius, Saulius, UŽdavinys, Tomas Kristijonas, Ivanov, Ruslan, Mensi, Mounir

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