Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal von Kalanov, M. U., Sadikov, I. I., Khugaev, A. V., Malikov, Sh. R., Saidov, A. S., Usmonov, Sh. N., Saparov, D. V.

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Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them von Saidov, A. S., Usmonov, Sh. N., Rakhmonov, U. Kh

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Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions von Saidov, A. S., Usmonov, Sh. N., Saparov, D. V., Akhmedov, A. M.

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Processes of Current Transport in p-Si-n-(Si2)1−y−z(GaP)y(ZnSe)z Heterostructure Produced by Liquid Phase Epitaxy von Saidov, A. S., Leyderman, A. Yu, Usmonov, Sh. N., Rakhmonov, U. Kh, Saparov, D. V., Suyarov, Q. T., Akhmedov, A. M.

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Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure von Saidov, A. S., Usmonov, Sh. N., Amonov, K. A., Niyazov, Sh, Khudayberdiyeva, A. I.

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Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots von Saidov, A. S., Usmonov, Sh. N., Amonov, K. A., Saidov, M. S., Kutlimuratov, B. R.

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Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films von Zaynabidinov, S. Z., Saidov, A. S., Leiderman, A. Yu, Kalanov, M. U., Usmonov, Sh. N., Rustamova, V. M., Boboev, A. Y.

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Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 –x(Sn2)x Heterostructures von Saidov, A. S., Leiderman, A. Yu, Usmonov, Sh. N., Asatova, U. P.

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Structural Features of the Epitaxial Layer of the (GaAs)1−y−z(Ge2)y(ZnSe)z Solid Solution Grown from a Bismuth Solution Melt von Saidov, A. S., Kalanov, M., Saparov, D. V., Usmonov, Sh. N., Eshonkhojaev, D. A., Tagaev, M. B., Akhmedov, A. M.

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Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature von Usmonov, Sh. N., Mirsagatov, Sh. A., Leyderman, A. Yu

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Possibility of obtaining the (GaSb)1 − x(Si2)x films on silicon substrates by the method of liquid-phase epitaxy von Usmonov, Sh. N., Saidov, A. S., Leyderman, A. Yu, Saparov, D., Kholikov, K. T.

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Liquid-phase epitaxy of the (Si{sub 2}){sub 1−x−y}(Ge{sub 2}){sub x}(GaAs){sub y} substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties... von Saidov, A. S., Usmonov, Sh. N., Saidov, M. S.

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Liquid-phase epitaxy of the (Si2)1 − x − y(Ge2)x(GaAs)y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties von Saidov, A. S., Usmonov, Sh. N., Saidov, M. S.

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Heat-voltaic effect of pSi-n(ZnSe)1 − x − y(Si2)x(GaP)y structures von Saidov, A. S., Saidov, M. S., Usmonov, Sh. N., Rakhmonov, U. Kh

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Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe)x solid solution von Usmonov, Sh. N., Saidov, A. S., Saidov, M. S., Amonov, K. A.

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Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x(ZnSe)x structures von Usmonov, Sh. N., Saidov, A. S., Saidov, M. S., Leiderman, A. Yu, Amonov, K. A.

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Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon von Saidov, M. S., Saidov, A. S., Usmonov, Sh. N.

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Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures von Saidov, A. S., Saidov, M. S., Usmonov, Sh. N., Kholikov, K. T., Saparov, D.

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I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx(CdS)x von Saidov, A. S., Leyderman, A. Yu, Usmonov, Sh. N., Kholikov, K. T.

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Influence of GaAs molecules on the photosensitivity of pSi-n(GaSb)^sub 1-x^(Si^sub 2^)^sub x^ and nGaAs-p(InSb)^sub 1-x^(SN2)^sub x^ heterostructures von Usmonov, Sh N

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