On-chip membrane-based GaInAs/InP waveguide-type p-i-n photodiode fabricated on silicon substrate von Gu, Zhichen, Uryu, Tatsuya, Nakamura, Nagisa, Inoue, Daisuke, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit von Tomiyasu, Takahiro, Inoue, Daisuke, Hiratani, Takuo, Fukuda, Kai, Nakamura, Nagisa, Uryu, Tatsuya, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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Lasing Wavelength Dependence on Injection Current of GaInAsP/InP Membrane Distributed Reflector Laser with Thin-BCB Layer von Fang, Weicheng, Uryu, Tatsuya, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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High-differential quantum efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si von Tomiyasu, Takahiro, Hiratani, Takuo, Inoue, Daisuke, Nakamura, Nagisa, Fukuda, Kai, Uryu, Tatsuya, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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Cycloaddition of singlet carbene to 2-vinylpyridine studied by laser flash photolysis of 3-(biphenyl-4-yl)-3-chlorodiazirine von Naito, Ikuo, Uryu, Tatsuya, Sasaki, Hisashi, Ishikawa, Takeshi, Kobayashi, Shinjiro, Kamata, Ikuko, Oku, Akira

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Study of consumption power of ridge waveguide type GaInAsP/InP membrane lasers von Nakamura, Nagisa, Uryu, Tatsuya, Gu, Zhichen, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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Membrane-based GaInAs/InP p-i-n photodiode fabricated on Si substrate von Gu, ZhiChen, Uryu, Tatsuya, Nakamura, Nagisa, Inoue, Daisuke, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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NRZ and PAM-4 direct modulation of membrane distributed-reflector laser on Si substrate von Uryu, Tatsuya, Nishiyama, Nobuhiko, Hiratani, Takuo, Inoue, Daisuke, Amemiya, Tomohiro, Arai, Shigehisa

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High Efficiency and High-speed Modulation Characteristics of Membrane Distributed-Reflector Laser on Si von Nakamura, Nagisa, Tomiyasu, Takahiro, Hiratani, Takuo, Inoue, Daisuke, Fukuda, Kai, Uryu, Tatsuya, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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Temperature Dependence of Threshold Current of GaInAsP/InP Membrane DFB Lasers by Bragg Wavelength Detuning von Fukuda, Kai, Inoue, Daisuke, Hiratani, Takuo, Tomiyasu, Takahiro, Uryu, Tatsuya, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same von Shimizu, Satoshi, Uryu, Tatsuya, Fujimura, Nobuyuki

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BONDED ASSEMBLY OF A SUPPORT DIE AND PLURAL MEMORY DIES CONTAINING LATERALLY SHIFTED VERTICAL INTERCONNECTIONS AND METHODS FOR MAKING THE SAME von Shimizu, Satoshi, Uryu, Tatsuya, Fujimura, Nobuyuki

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BONDED ASSEMBLY OF A SUPPORT DIE AND PLURAL MEMORY DIES CONTAINING LATERALLY SHIFTED VERTICAL INTERCONNECTIONS AND METHODS FOR MAKING THE SAME von URYU, Tatsuya, SHIMIZU, Satoshi, FUJIMURA, Nobuyuki

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BONDED ASSEMBLY OF A SUPPORT DIE AND PLURAL MEMORY DIES CONTAINING LATERALLY SHIFTED VERTICAL INTERCONNECTIONS AND METHODS FOR MAKING THE SAME von SHIMIZU SATOSHI, URYU TATSUYA, FUJIMURA NOBUYUKI

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リッジ導波路型GaInAsP/InP半導体薄膜レーザの消費電力の検討 von 中村, なぎさ, 瓜生, 達也, Zhichen, Gu, 雨宮, 智宏, 西山, 伸彦, 荒井, 滋久

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Si基板上薄膜分布反射型レーザのNRZ及びPAM-4直接変調 von 瓜生, 達也, 西山, 伸彦, 平谷, 拓生, 井上, 大輔, 雨宮, 智宏, 荒井, 滋久

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Si上GaInAs/InP p-i-n薄膜光検出器の感度特性の評価 von 顧, 之チン, 瓜生, 達也, 中村, なぎさ, 井上, 大輔, 雨宮, 智宏, 西山, 伸彦, 荒井, 滋久

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Light output characteristics of membrane distributed Bragg reflector laser with surface grating von Hiratani, Takuo, Inoue, Daisuke, Tomiyasu, Takahiro, Fukuda, Kai, Uryu, Tatsuya, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa

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ブラッグ波長デチューニングによるGaInAsP/InP薄膜DFBレーザのしきい値電流の温度依存性 von 福田, 快, 井上, 大輔, 平谷, 拓生, 冨安, 高弘, 瓜生, 達也, 雨宮, 智宏, 西山, 伸彦, 荒井, 滋久

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Si上半導体薄膜DRレーザの高効率・高速変調特性 von 中村, なぎさ, 冨安, 高弘, 平谷, 拓生, 井上, 大輔, 福田, 快, 瓜生, 達也, 雨宮, 智宏, 西山, 伸彦, 荒井, 滋久

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