Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures von Sarua, A., Hangfeng Ji, Kuball, M., Uren, M.J., Martin, T., Hilton, K.P., Balmer, R.S.

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices von Sarua, A., Hangfeng Ji, Hilton, K.P., Wallis, D.J., Uren, M.J., Martin, T., Kuball, M.

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Anomalous Kink Effect in GaN High Electron Mobility Transistors von Meneghesso, G., Zanon, F., Uren, M.J., Zanoni, E.

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Punch-through in short-channel AlGaN/GaN HFETs von Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.

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Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy von Simms, R.J.T., Pomeroy, J.W., Uren, M.J., Martin, T., Kuball, M.

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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy von Kuball, M., Hayes, J.M., Uren, M.J., Martin, I., Birbeck, J.C.H., Balmer, R.S., Hughes, B.T.

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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers von Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J., Kuball, M.

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On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT von Oxley, C.H., Uren, M.J., Coates, A., Hayes, D.G.

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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering von Roff, C., Benedikt, J., Tasker, P.J., Wallis, D.J., Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M.J., Martin, T.

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Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor von Oxley, C.H., Uren, M.J.

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High temperature performance of AlGaN/GaN HEMTs on Si substrates von Tan, W.S., Uren, M.J., Fry, P.W., Houston, P.A., Balmer, R.S., Martin, T.

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High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC von Cuerdo, R., Sillero, E., Romero, M.F., Uren, M.J., di Forte Poisson, M.-A., Munoz, E., Calle, F.

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Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs von Rajasingam, S., Pomeroy, J.W., Kuball, M., Uren, M.J., Martin, T., Herbert, D.C., Hilton, K.P., Balmer, R.S.

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Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices von Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Kuball, M.

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Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs von Wells, A.M., Uren, M.J., Balmer, R.S., Hilton, K.P., Martin, T., Missous, M.

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Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing von Pomeroy, J.W., Uren, M.J., Lambert, B., Kuball, M.

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Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise von Kirton, M.J., Uren, M.J.

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Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes von Rackauskas, B., Uren, M.J., Kachi, T., Kuball, M.

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A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation von Lee, M.S.L., Tenbroek, B.M., Redman-White, W., Benson, J., Uren, M.J.

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Impact of self-heating and thermal coupling on analog circuits in SOI CMOS von Tenbroek, B.M., Lee, M.S.L., Redman-White, W., Bunyan, R.J.T., Uren, M.J.

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