Role for yeast inhibitor of apoptosis (IAP)-like proteins in cell division von Uren, A.G, Beilharz, T, O'Connell, M.J, Bugg, S.J, Van Driel, R, Vaux, D.L, Lithgow, T

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Clinical importance and surgical management of sentinel lymph nodes in the popliteal fossa of melanoma patients von Nijhuis, Amanda A.G., de A.O. Santos Filho, Ivan D., Uren, Roger F., Thompson, John F., Nieweg, Omgo E.

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Current management of patients with melanoma who are found to be sentinel node‐positive von Nijhuis, Amanda A. G., Spillane, Andrew J., Stretch, Jonathan R., Saw, Robyn P. M., Menzies, Alexander M., Uren, Roger F., Thompson, John F., Nieweg, Omgo E.

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Sentinel Node Biopsy for Melanoma Patients with a Local Recurrence or In-Transit Metastasis von Nijhuis, Amanda A. G., Santos Filho, Ivan D. de A. O., Holtkamp, Lodewijka H. J., Uren, Roger F., Thompson, John F., Nieweg, Omgo E.

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Silicon Carbide Vertical JFET Operating at High Temperature von Nikitina, Irina P., Hydes, A.J., Johnson, C. Mark, Munday, A.G., Vassilevski, Konstantin, Wright, Nicolas G., Hilton, Keith P., Horsfall, Alton B., Uren, Michael J.

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High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension von Nikitina, Irina P., Hydes, A.J., Johnson, C. Mark, Munday, A.G., Vassilevski, Konstantin, Wright, Nicolas G., O'Neill, Anthony G., Horsfall, Alton B., Hilton, Keith P., Uren, Michael J.

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High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown von Nikitina, Irina P., Hydes, A.J., Johnson, C. Mark, Munday, A.G., Vassilevski, Konstantin, Wright, Nicolas G., O'Neill, Anthony G., Horsfall, Alton B., Hilton, Keith P., Bhatnagar, Praneet, Uren, Michael J.

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High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes von Hydes, A.J., Johnson, C. Mark, Munday, A.G., Wright, Nicolas G., Horsfall, Alton B., Hilton, Keith P., Bhatnagar, Praneet, Uren, Michael J.

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High Temperature Characterisation of 4H-SiC VJFET von Hydes, A.J., Johnson, C. Mark, Munday, A.G., Vassilevski, Konstantin, Wright, Nicolas G., Horsfall, Alton B., Hilton, Keith P., Bhatnagar, Praneet, Uren, Michael J.

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An experimental and theoretical study of the formation and microstructure of porous silicon von Beale, M.I.J., Benjamin, J.D., Uren, M.J., Chew, N.G., Cullis, A.G.

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Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes von Morrison, D.J, Hilton, K.P, Uren, M.J, Wright, N.G, Johnson, C.M, O’Neill, A.G

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Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation von Morrison, D.J, Wright, N.G, Horsfall, A.B, Johnson, C.M, O’Neill, A.G, Knights, A.P, Hilton, K.P, Uren, M.J

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The formation of porous silicon by chemical stain etches von Beale, M.I.J., Benjamin, J.D., Uren, M.J., Chew, N.G., Cullis, A.G.

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GaN H-FET development at QinetiQ von Martin, T., Uren, M.J., Balmer, R.S., Soley, D., Wallis, D.J., Hilton, K.P., Maclean, J.O., Munday, A.G., Hydes, A.J., Hayes, D.G., Oxley, C.H., McGovern, P., Tasker, P.J.

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