Atomic diffusion bonding of Si wafers using thin Nb films von Uomoto, Miyuki, Shimatsu, Takehito

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Atomic diffusion bonding in air using Ag films von Watabe, Yuki, Goto, Fuki, Uomoto, Miyuki, Shimatsu, Takehito

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High-output-power deep ultraviolet light-emitting diode assembly using direct bonding von Ichikawa, Masatsugu, Fujioka, Akira, Kosugi, Takao, Endo, Shinya, Sagawa, Harunobu, Tamaki, Hiroto, Mukai, Takashi, Uomoto, Miyuki, Shimatsu, Takehito

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Rearrangement of crystal lattice at a Ag/Ag and Au/Au bonded interface in atomic diffusion bonding von Matsuda, Shigenobu, Uomoto, Miyuki, Miura, Ayaka, Shimatsu, Takehito

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Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization von Yamada, Yuki, Nada, Masahiro, Uomoto, Miyuki, Shimatsu, Takehito, Nakajima, Fumito, Hoshi, Takuya, Matsuzaki, Hideaki

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Interface structure of InGaAs wafers bonded using thin amorphous Ge films in vacuum von Uomoto, Miyuki, Yamada, Yuki, Hoshi, Takuya, Nada, Masahiro, Shimatsu, Takehito

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Prophylactic Effect of Dietary Seaweed Fucoidan against Enteral Prion Infection von DOH-URA, Katsumi, KUGE, Tomoko, UOMOTO, Miyuki, NISHIZAWA, Keiko, KAWASAKI, Yuri, IHA, Masahiko

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(Invited) Room Temperature Bonding Using Thin Metal Films (Bonding Energy and Technical Potential) von Shimatsu, Takehito, Uomoto, Miyuki, Kon, Hitoe

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Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications von Yonezawa, Gen, Uomoto, Miyuki, Shimatsu, Takehito

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Preferred Grain Orientation to Enhance Interdiffusion at Room Temperature in Atomic Diffusion Bonding: A Fundamental Study Using Ni and Cu Films von Uomoto, Miyuki, Kikuchi, Shun, Goto, Fuki, Shimatsu, Takehito

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Blade Test in Atmospheric-Pressure Ar Gas to Characterize Bonded Interface Fabricated Using Atomic Diffusion Bonding von Iemura, Hikaru, Goto, Fuki, Uomoto, Miyuki, Shimatsu, Takehito

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Crystal Lattice Rearrangement Occurred at Au/Ag Bonded Interface in Atomic Diffusion Bonding in Vacuum von Goto, Fuki, Iemura, Hikaru, Uomoto, Miyuki, Shimatsu, Takehito

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Atomic Diffusion Bonding in Air Using Oxide Films von Shimatsu, Takehito, Uomoto, Miyuki, Fukunaga, Hitomi, Makita, Hiroyuki, Suzuki, Yudai, Kozuka, Yuhei, Muraoka, Arina, Saito, Takayuki

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First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding von Yamada, Yuki, Nada, Masahiro, Uomoto, Miyuki, Shimatsu, Takehito, Nakajima, Fumito, Matsuzaki, Hideaki

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De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film von Mu, Fengwen, Uomoto, Miyuki, Shimatsu, Takehito, Wang, Yinghui, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Higurashi, Eiji, Suga, Tadatomo

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De-bondable SiCSiC wafer bonding via an intermediate Ni nano-film von Mu, Fengwen, Uomoto, Miyuki, Shimatsu, Takehito, Wang, Yinghui, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Higurashi, Eiji, Suga, Tadatomo

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(Invited) Room Temperature Bonding of Wafers with Thin Nanocrystalline Metal Films von Shimatsu, Takehito, Uomoto, Miyuki

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Room Temperature Bonding of Wafers Using Si and Ge Films with Extremely Low Electrical Conductivity von Uomoto, Miyuki, Muraoka, Arina, Shimatsu, Takehito

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Necessary Thickness of Au Capping Layers for Room Temperature Bonding of Wafers in Air Using Thin Metal Films with Au Capping Layers von Uomoto, Miyuki, Shimatsu, Takehito

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Atomic Diffusion Bonding for Optical Devices with High Optical Density von Yonezawa, Gen, Takahashi, Yuichi, Sato, Yoshihisa, Abe, Shohei, Uomoto, Miyuki, Shimatsu, Takehito

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