Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors von Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

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Origin of light instability in amorphous IGZO thin-film transistors and its suppression von Mativenga, Mallory, Haque, Farjana, Billah, Mohammad Masum, Um, Jae Gwang

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Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time von Gwang Um, Jae, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

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Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT von Jeon, Jae Kwon, Um, Jae Gwang, Lee, Suhui, Jang, Jin

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Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C von Hasan, Md Mehedi, Billah, Mohammad Masum, Naik, Mude Narendra, Jae Gwang Um, Jin Jang

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Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs von Chang Hoon Jeon, Jae Gwang Um, Mativenga, Mallory, Jin Jang

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Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity von Chowdhury, Md Delwar Hossain, Mativenga, Mallory, Jae Gwang Um, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy John, Jin Jang

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Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation von Billah, Mohammad Masum, Delwar Hossain Chowdhury, Md, Mativenga, Mallory, Jae Gwang Um, Mruthyunjaya, Ravi K., Heiler, Gregory N., Tredwell, Timothy John, Jin Jang

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Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C von Chowdhury, Md Delwar Hossain, Um, Jae Gwang, Jang, Jin

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Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors von Mativenga, Mallory, Um, Jae, Jang, Jin

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Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs von Mativenga, Mallory, Haeyeon Jun, Younwoo Choe, Jae Gwang Um, Jin Jang

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66‐4: High Brightness Active Matrix Micro‐LEDs with LTPS TFT Backplane von Kim, Hyo-Min, Um, Jae Gwang, Lee, Suhui, Jeong, Duk Young, Jung, Younghun, Lee, Sang Hern, Jeong, Tak, Joo, Jaeyoung, Hur, Jeongwook, Choi, Jong Hwa, Kwak, Joon Seop, Jang, Jin

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Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding von Um, Jae Gwang, Jeong, Duk Young, Jung, Younghun, Moon, Joon Kwon, Jung, Yeon Hong, Kim, Seonock, Kim, Sung Hwan, Lee, Jeong Soo, Jang, Jin

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Thermal Stability Improvement of Back Channel Etched a-IGZO TFTs by Using Fluorinated Organic Passivation von Park, Young Chul, Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

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Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching von Park, Young Chul, Um, Jae Gwang, Mativenga, Mallory, Jang, Jin

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Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature von Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

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Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor von Chun, Minkyu, Um, Jae Gwang, Park, Min Sang, Chowdhury, Md Delwar Hossain, Jang, Jin

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Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors von Um, Jae Gwang, Mativenga, Mallory, Migliorato, Piero, Jang, Jin

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64-3: Distinguished Student Paper: Bulk Accumulation Oxide TFTs for Flexible AMOLED Display with High Yield Integrated Gate Driver von Um, Jae Gwang, Geng, Di, Mativenga, Mallory, Jang, Jin

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P‐29: Flexible Gate Driver for Bendable AMOLED Display with Homojunction Oxide TFTs von Um, Jae Gwang, Geng, Di, Jeon, Jae Kwon, Chen, Yuanfeng, Mativenga, Mallory, Jang, Jin

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