Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing von Petrov, A.S., Tapero, K.I., Ulimov, V.N.

Volltext

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices von Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.

Volltext

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment von Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

Volltext

Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors von Pershenkov, V.S., Bashin, A.Y., Zebrev, G.I., Avdeev, S.V., Belyakov, V.V., Ulimov, V.N., Emelianov, V.V.

Volltext

Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers von Petrov, A.S., Tapero, K.I., Ulimov, V.N., Chlenov, A.M.

Volltext

Effect of aging on radiation response of bipolar transistors von Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.

Volltext

Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect von Petrov, A.S., Ulimov, V.N.

Volltext

True dose rate physical mechanism of ELDRS effect in bipolar devices von Pershenkov, V.S., Petrov, A.S., Bakerenkov, A.S., Ulimov, V.N., Felytsyn, V.A., Rodin, A.S., Belyakov, V.V., Telets, V.A., Shurenkov, V.V.

Volltext

Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response von Pershenkov, V.S., Avdeev, S.V., Tsimbalov, A.S., Levin, M.N., Belyakov, V.V., Ivashin, D.V., Slesarev, A.Y., Bashin, A.Y., Zebrev, G.I., Ulimov, V.N., Emelianov, V.V.

Volltext

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices von Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.

Volltext

Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures von Pershenkov, V.S., Cherepko, S.V., Sogoyan, A.V., Belyakov, V.V., Ulimov, V.N., Abramov, V.V., Shalnov, A.V., Rusanovsky, V.I.

Volltext

Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses von Emelianov, V.V., Zebrev, G.I., Ulimov, V.N., Useinov, R.G., Belyakov, V.V., Pershenkov, V.S.

Volltext

Effect of electron traps on reversibility of annealing von Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Nikiforov, A.Y., Sogoyan, A.V., Ulimov, V.N., Emelianov, V.V.

Volltext

A System for Monitoring the Energy Characteristics of an Electron Beam during the Generation of High-Power Bremsstrahlung Pulses von Mordasov, N. G., Ulimov, V. N., Bryksin, V. A., Shiyan, V. D.

Volltext

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs von Pershenkov, V. S., Savchenkov, D. V., Bakerenkov, A. S., Ulimov, V. N.

Volltext

Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect von PETROV, A. S, ULIMOV, V. N

Volltext

The use of high-energy ion synchrotron at the ITEP for SEE testing of modern electronic components von Zinchenko, V. F., Lavrentjev, K. V., Lipsky, A. K., Ulimov, V. N., Alexejev, N. N.

Volltext

The conversion model of low dose rate effect in bipolar transistors von Pershenkov, V. S., Savchenkov, D. V., Bakerenkov, A. S., Ulimov, V. N., Nikiforov, A. Y., Chumakov, A. I., Romanenko, A. A.

Volltext

Interface trap model for the low-dose-rate effect in bipolar devices von Pershenkov, V.S., Chumakov, K.A., Nikiforov, A.Y., Chumakov, A.I., Ulimov, V.N., Romanenko, A.A.

Volltext

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment von Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.

Volltext