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  1. 1
    Mathematical Model of Metal–Oxide Memristor Resistive Switching based on Full Physical Model of Heat and Mass Transfer of Oxygen Vacancies and Ions

    Mathematical Model of Metal–Oxide Memristor Resistive Switching based on Full Physical Model of Heat and Mass Transfer of Oxygen Vacancies and Ions von Busygin, Alexander Nikolaevich, Udovichenko, Sergey Yurievich, Ebrahim, Abdullah Haidar Abdo, Bobylev, Andrey Nikolaevich, Gubin, Alexey Alexandrovich


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    The Effect of Aluminum Dopant Amount in Titania Film on the Memristor Electrical Properties

    The Effect of Aluminum Dopant Amount in Titania Film on the Memristor Electrical Properties von Bobylev, Andrey Nikolayevich, Busygin, Alexander Nikolayevich, Ebrahim, Abdullah Haidar, Udovichenko, Sergey Yurievich

    Veröffentlicht in Nano hybrids and composites

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