Observation of the One-Dimensional Diffusion of Nanometer-Sized Dislocation Loops von Arakawa, K, Ono, K, Isshiki, M, Mimura, K, Uchikoshi, M, Mori, H

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Time course of axial and radial diffusion kurtosis of white matter infarctions: period of pseudonormalization von Taoka, T, Fujioka, M, Sakamoto, M, Miyasaka, T, Akashi, T, Ochi, T, Hori, S, Uchikoshi, M, Xu, J, Kichikawa, K

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Lymphotropic hepatitis C virus has an interferon-resistant phenotype von Inokuchi, M., Ito, T., Nozawa, H., Miyashita, M., Morikawa, K., Uchikoshi, M., Shimozuma, Y., Arai, J., Shimazaki, T., Hiroishi, K., Imawari, M.

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Mass Production of High-Purity Iron Using Anion-Exchange Separation and Plasma Arc Melting von Uchikoshi, M., Shibuya, H., Kékesi, T., Mimura, K., Isshiki, M.

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Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy von Suzuno, M., Ugajin, Y., Murase, S., Suemasu, T., Uchikoshi, M., Isshiki, M.

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Impurity behavior in Cu refined by Ar plasma-arc zone melting von Lalev, G. M., Lim, J. -W., Munirathnam, N. R., Choi, G. -S., Uchikoshi, M., Mimura, K., Isshiki, M.

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Preparation of high-purity cobalt von Mimura, K, Uchikoshi, M, Kekesi, T, Isshiki, M

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Purification of Cu by hydrogen plasma-arc zone melting and characterization of trace impurities by secondary ion mass spectrometry von Lalev, G.M., Lim, J.-W., Munirathnam, N.R., Choi, G.-S., Uchikoshi, M., Mimura, K., Isshiki, M.

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Formation of Si grains from a NaSi melt prepared by reaction of SiO sub(2) and Na von Yamane, H, Morito, H, Uchikoshi, M

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A Case of Hepatocellular Carcinoma Successfully Resumed Atezolizumab and Bevacizumab After Associated Grade 3 Diarrhea and Grade 2 Colitis: Case Report and Literature Review von Fuji, Takahiro, Otoyama, Jun Arai Yumi, Nio, Yuta, Sugiura, Ikuya, Nakajima, Yoko, Kajiwara, Atsushi, Ichikawa, Yuki, Uozumi, Shojiro, Shimozuma, Yuu, Uchikoshi, Manabu, Sakaki, Masashi, Nozawa, Hisako, Momo, Kenji, Sasaki, Tadanori, Yoshida, Hitoshi

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High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy von Ji, S.Y., Lalev, G.M., Wang, J.F., Uchikoshi, M., Isshiki, M.

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Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition von Ebe, H, Okamoto, T, Nishino, H, Saito, T

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Refining effect of hydrogen plasma arc melting on titanium sponges von Mimura, K., Lim, J.-W., Oh, J.-M., Choi, G.-S., Cho, S.-W., Uchikoshi, M., Isshiki, M.

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Production of semiconductor grade high-purity iron von Uchikoshi, Masahito, Imaizumi, Junichi, Shibuya, Hideka, Kékesi, Tamás, Mimura, Kouji, Isshiki, Minoru

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Characteristics of the Pathological Images of Coronary Artery Thrombi According to the Infarct-Related Coronary Artery in Acute Myocardial Infarction von Nagata, Yoshiki, Usuda, Kazuo, Uchiyama, Akio, Uchikoshi, Manabu, Sekiguchi, Yoshiteru, Kato, Hiroaki, Miwa, Atsuo, Ishikawa, Tadao

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Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method von Bae, Joon Woo, Lim, Jae-Won, Mimura, Kouji, Uchikoshi, Masahito, Wada, Mitsuhiro, Ikeda, Makoto, Isshiki, Minoru

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Preparation and Evaluation of High-Purity La2O3 von Lee, Gwang Seop, Uchikoshi, Masahito, Mimura, Kouji, Isshiki, Minoru

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Effect of using a high-purity Fe source on the transport propertiesof p -type β -FeSi 2 grown by molecular-beam epitaxy von Suzuno, M., Ugajin, Y., Murase, S., Suemasu, T., Uchikoshi, M., Isshiki, M.

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Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing von Maruyama, K, Nishino, H, Okamoto, T, Murakami, S

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Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates von Shigenaka, K, Matsushita, K, Sugiura, L, Nakata, F

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