METHOD FOR VERTEBRAL OSTEOSYNTHESIS von USIKOV V.D, AFAUNOV A.A, USIKOV V.V

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METHOD FOR VERTEBRAL REPOSITION IN CASE OF FRAGMENTATION-TYPE FRACTURES AND FRACTURES-DISLOCATIONS von USIKOV V.D, AFAUNOV A.A, USIKOV V.V

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METHOD FOR SURGICAL TREATING OF VERTEBRAL CANAL von USIKOV V.D, BONOKHOV A.I, FADEEV E.M, SOLOMATIN A.A, USIKOV V.V, PTASHNIKOV D.A, LOBODA V.A

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Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System von Emtsev, V. V., Gushchina, E. V., Petrov, V. N., Tal’nishnih, N. A., Chernyakov, A. E., Shabunina, E. I., Shmidt, N. M., Usikov, A. S., Kartashova, A. P., Zybin, A. A., Kozlovski, V. V., Kudoyarov, M. F., Saharov, A. V., Oganesyan, A. G., Poloskin, D. S., Lundin, V. V.

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Active media based on polyurethane doped with a binary dye mixture von Nikolaiev, S., Pozhar, V., Dzyubenko, M., Nikolaiev, K.

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On the potential of the total phase accumulation method in object observations through earth’s atmosphere von Kornienko, Y., Liashenko, I., Pugach, V., Skuratovskiy, S.

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Radiation hardness of n-GaN schottky diodes von Lebedev, A. A., Belov, S. V., Mynbaeva, M. G., Strel’chuk, A. M., Bogdanova, E. V., Makarov, Yu. N., Usikov, A. S., Kurin, S. Yu, Barash, I. S., Roenkov, A. D., Kozlovski, V. V.

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Radiation-induced defects in n-type GaN and InN von Emtsev, V.V., Davydov, V.Yu, Haller, E.E., Klochikhin, A.A., Kozlovskii, V.V., Oganesyan, G.A., Poloskin, D.S., Shmidt, N.M., Vekshin, V.A., Usikov, A.S.

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Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure von Ankudinov, A.V., Besyulkin, A.I., Kolmakov, A.G., Lundin, W.V., Ratnikov, V.V., Shmidt, N.M., Sitnikova, A.A., Titkov, A.N., Usikov, A.S., Yakimov, E.B., Zavarin, E.E., Zolotareva, R.V.

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Behavior of electrically active point defects in irradiated MOCVD n-GaN von Emtsev, V.V, Davydov, V.Yu, Kozlovskii, V.V, Poloskin, D.S, Smirnov, A.N, Shmidt, N.M, Usikov, A.S

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Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers von Shmidt, N.M., Davydov, D.V., Emtsev, V.V., Krestnikov, I.L., Lebedev, A.A., Lundin, W.V., Poloskin, D.S., Sakharov, A.V., Usikov, A.S., Osinsky, A.V.

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A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayers von Kolmakov, A.G., Emtsev, V.V., Lundin, W.V., Ratnikov, V.V., Shmidt, N.M., Titkov, A.N., Usikov, A.S.

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Mosaic Structure and Si Doping Related Peculiarities of Charge Carrier Transport in III-V Nitrides von Shmidt, N.M., Emtsev, V.V., Kryzhanovsky, A.S., Kyutt, R.N., Lundin, W.V., Poloskin, D.S., Ratnikov, V.V., Sakharov, A.V., Titkov, A.N., Usikov, A.S., Girard, P.

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Effect of Si doping on structural, photoluminescence and electrical properties of GaN von Shmidt, N.M., Lebedev, A.V., Lundin, W.V., Pushnyi, B.V., Ratnikov, V.V., Shubina, T.V., Tsatsul’nikov, A.A., Usikov, A.S., Pozina, G., Monemar, B.

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Growth and Characterization of AlGaN/GaN Superlattices von Lundin, W.V., Sakharov, A.V., Tsatsulnikov, A.F., Zavarin, E.E., Besulkin, A.I., Kokorev, M.F., Kyutt, R.N., Davydov, V.Yu, Tretyakov, V.V., Pakhnin, D.V., Usikov, A.S.

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Optic and Acoustic Phonons in Strained Hexagonal GaN/AlGaN Multilayer Structures von Davydov, V.Yu, Klochikhin, A.A., Kozin, I.E., Emtsev, V.V., Goncharuk, I.N., Smirnov, A.N., Kyutt, R.N., Scheglov, M.P., Sakharov, A.V., Lundin, W.V., Zavarin, E.E., Usikov, A.S.

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Perturbation of a stochastic web von AFANAS'EV, V. V, ZAGDEEV, R. Z, USIKOV, D. A, ZASLAVSKY, G. M

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Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices von Krestnikov, Igor L., Lundin, V.V., Sakharov, A.V., Bedarev, D.A., Zavarin, E.E., Musikhin, Yu.G., Shmidt, N.M., Tsatsul'nikov, A.F., Usikov, A.S., Ledentsov, N.N., Alferov, Zh.I.

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Macro- and microstrains in MOCVD-grown GaN von Usikov, A., Ratnikov, V.V., Kyutt, R., Lundin, W. V., Pushnyi, B., Shmidt, N. M., Scheglov, M.P.

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Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides von Busov, V., Ratnikov, V.V., Emtsev, Valentin V., Kyutt, R., Lundin, W., Usikov, A., Poloskin, D.S., Shmidt, N., Sakharov, A.V.

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