Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization von Toko, K., Numata, R., Oya, N., Fukata, N., Usami, N., Suemasu, T.

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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization von Toko, K., Kurosawa, M., Saitoh, N., Yoshizawa, N., Usami, N., Miyao, M., Suemasu, T.

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Thermal boundary conductance of artificially and systematically designed grain boundaries of Silicon measured by laser heterodyne photothermal displacement method von Harada, T., Kutsukake, K., Usami, N., Ikari, T., Fukuyama, A.

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Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon von Hara, K. O., Usami, N., Toh, K., Baba, M., Toko, K., Suemasu, T.

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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange von Toko, K., Numata, R., Saitoh, N., Yoshizawa, N., Usami, N., Suemasu, T.

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Optical properties of ZnO rods formed by metalorganic chemical vapor deposition von Zhang, B. P., Binh, N. T., Segawa, Y., Wakatsuki, K., Usami, N.

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Enhancement of radiation effect by heavy elements von Kobayashi, K., Usami, N., Porcel, E., Lacombe, S., Le Sech, C.

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Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift von Takeda, K., Yoneda, J., Otsuka, T., Nakajima, T., Delbecq, M. R., Allison, G., Hoshi, Y., Usami, N., Itoh, K. M., Oda, S., Kodera, T., Tarucha, S.

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Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputtering von Nemoto, T., Matsuno, S., Sato, T., Gotoh, K., Mesuda, M., Kuramochi, H., Toko, K., Usami, N., Suemasu, T.

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Formation of highly aligned ZnO tubes on sapphire (0001) substrates von Zhang, B. P., Binh, N. T., Wakatsuki, K., Segawa, Y., Yamada, Y., Usami, N., Kawasaki, M., Koinuma, H.

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Growth mechanism of Si-faceted dendrites von Fujiwara, K, Maeda, K, Usami, N, Nakajima, K

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Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy von Montes, A., Eijt, S. W. H., Tian, Y., Gram, R., Schut, H., Suemasu, T., Usami, N., Zeman, M., Serra, J., Isabella, O.

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Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111) von Nakamura, K., Baba, M., Ajmal Khan, M., Du, W., Sasase, M., Hara, K. O., Usami, N., Toko, K., Suemasu, T.

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Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy von Khan, M. Ajmal, Nakamura, K., Du, W., Toko, K., Usami, N., Suemasu, T.

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Orientation control of Ge thin films by underlayer-selected Al-induced crystallization von Toko, K, Nakazawa, K, Saitoh, N, Yoshizawa, N, Usami, N, Suemasu, T

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Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy von Tsukahara, D., Baba, M., Honda, S., Imai, Y., Hara, K. O., Usami, N., Toko, K., Werner, J. H., Suemasu, T.

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The results of modified distraction arthroplasty for degenerated osteoarthritis of the ankle von Usami, N., V, Ikezawa, H

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Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy von Baba, M., Toh, K., Toko, K., Hara, K.O., Usami, N., Saito, N., Yoshizawa, N., Suemasu, T.

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Formation mechanism of parallel twins related to Si-facetted dendrite growth von Fujiwara, K., Maeda, K., Usami, N., Sazaki, G., Nose, Y., Nakajima, K.

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Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy von Koike, S., Toh, K., Baba, M., Toko, K., Hara, K.O., Usami, N., Saito, N., Yoshizawa, N., Suemasu, T.

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