Cost-Effective Optical Sub-Assembly Using Lens-Integrated Surface-Emitting Laser von Suzuki, Takanori, Adachi, Koichiro, Takei, Aki, Tamura, Kohichi R., Nakanishi, Akira, Naoe, Kazuhiko, Ohtoshi, Tsukuru, Nakahara, Kouji, Tanaka, Shigehsa, Uomi, Kazuhisa

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GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance von KONDOW, M, UOMI, K, NIWA, A, KITATANI, T, WATAHIKI, S, YAZAWA, Y

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Gas-source molecular beam epitaxy of GaNxAs1-x using a N radical as the N source von KONDOW, M, UOMI, K, HOSOMI, K, MOZUME, T

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Advanced research of high-performance quantum-well semiconductor lasers and its practical application von Uomi, Kazuhisa

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Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy von Kitatani, Takeshi, Kondow, Masahiko, Kikawa, Takeshi, Yazawa, Yoshiaki, Okai, Makoto, Uomi, Kazuhisa

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Modulation-doped multi-quantum well (MD-MQW) lasers. I, Theory von UOMI, K

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GaInNAs: a novel material for long-wavelength semiconductor lasers von Kondow, M., Kitatani, T., Nakatsuka, S., Larson, M.C., Nakahara, K., Yazawa, Y., Okai, M., Uomi, K.

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LGLC Tunable Laser for Small-Form-Factor Transceiver: High Optical Power and High SMSR With Low Power Consumption von Suzuki, Takanori, Arimoto, Hideo, Kitatani, Takeshi, Takei, Aki, Taniguchi, Takafumi, Shinoda, Kazunori, Nakamura, Atsushi, Naoe, Kazuhiko, Uchida, Kenji, Uomi, Kazuhisa, Tanaka, Shigehisa, Ido, Tatemi

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Lasing operation of InGaAsP-Based InGaAs/GaAs vertical-cavity surface-emitting lasers with a strain-compensated active region von SHINODA, K, HIRAMOTO, K, SAGAWA, M, UOMI, K

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Modulation-doped multi-quantum well (MD-MQW) lasers. II, Experiment von UOMI, K, MISHIMA, T, CHINONE, N

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A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K von Kitatani, Takeshi, Nakahara, Kouji, Kondow, Masahiko, Uomi, Kazuhisa, Tanaka, Toshiaki

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Proposal on reducing the damping constant in semiconductor lasers by using quantum well structures von UOMI, K, CHINONE, N

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1.3- \mu m InGaAlAs Short-Cavity DBR Lasers for Uncooled 10-Gb/s Operation With Low Drive Current von Shinoda, K., Kitatani, T., Aoki, M., Mukaikubo, M., Uchida, K., Uomi, K.

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Novel method of determining conduction-band discontinuities by using monolayer energy splitting in quantum-well structures von UOMI, K, SASAKI, S, TSUCHIYA, T, CHINONE, N

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Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode von Kitatani, Takeshi, Kondow, Masahiko, Nakahara, Koji, Larson, M. C., Uomi, Kazuhisa

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High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-µm Vertical-Cavity Surface-Emitting Lasers von Shinoda, Kazunori, Hiramoto, Kiyohisa, Uomi, Kazuhisa, Tomonobu Tsuchiya, Tomonobu Tsuchiya

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In situ X-ray monitoring of metalorganic vapor phase epitaxy von TSUCHIYA, T, TANIWATARI, T, UOMI, K, KAWANO, T, ONO, Y

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InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD von Aoki, M., Suzuki, M., Sano, H., Kawano, T., Ido, T., Taniwatari, T., Uomi, K., Takai, A.

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High relaxation oscillation frequency (beyond 10 GHz) of GaAlAs multiquantum well lasers von VOMI, K, CHINONE, N, OHTOSHI, T, KAJIMURA, T

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Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration von Okuno, Y., Uomi, K., Aoki, M., Tsuchiya, T.

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