New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector von Um, Dae‐Young, Chandran, Bagavath, Kim, Ji‐Yeon, Oh, Jeong‐Kyun, Kim, Sung‐Un, An, Jong Uk, Lee, Cheul‐Ro, Ra, Yong‐Ho

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Sub-micron Monolithic Full-color Nanorod LEDs on A Single Substrate von Kim, Sung-Un, Oh, Jeong-Kyun, Um, Dae-Young, Chandran, Bagavath, Lee, Cheul-Ro, Ra, Yong-Ho

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III-nitride nanowires for emissive display technology von Vignesh, Veeramuthu, Wu, Yuanpeng, Kim, Sung-Un, Oh, Jeong-Kyun, Bagavath, Chandran, Um, Dae-Young, Mi, Zetian, Ra, Yong-Ho

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A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure von Park, Ji-Hyeon, Nandi, R, Sim, Jae-Kwan, Um, Dae-Young, Kang, San, Kim, Jin-Soo, Lee, Cheul-Ro

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Effects of growth temperatures on the characteristics of n-GaN nanorods–graphene hybrid structures von Kang, San, Mandal, Arjun, Park, Ji-Hyeon, Um, Dae-Young, Chu, Jae Hwan, Kwon, Soon-Yong, Lee, Cheul-Ro

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III-nitride nanowires for solar light harvesting: A review von Chatterjee, U., Park, Ji-Hyeon, Um, Dae-Young, Lee, Cheul-Ro

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Low-Leakage Current Core–Shell AlGaN Nanorod LED Device Operating in the Ultraviolet‑B Band von Oh, Jeong-Kyun, Um, Dae-Young, Chandran, Bagavath, Kim, Sung-Un, Lee, Cheul-Ro, Ra, Yong-Ho

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External catalyst-free InGaN photoelectrode for highly efficient energy conversion and H2 generation von Um, Dae-Young, Chandran, Bagavath, Oh, Jeong-Kyun, Kim, Sung-Un, Yu, Yeon-Tae, Park, Ji-Hyeon, Lee, Cheul-Ro, Ra, Yong-Ho

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Improvement in the performance of CIGS solar cells by introducing GaN nanowires on the absorber layer von Sim, Jae-Kwan, Um, Dae-Young, Kim, Jong-Woong, Kim, Jin-Soo, Jeong, Kwang-Un, Lee, Cheul-Ro

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Structural Engineering in a Microscale Laser Diode with InGaN Tunnel-Junction Nanorods von Kim, Sung-Un, Um, Dae-Young, Oh, Jeong-Kyun, Chandran, Bagavath, Lee, Cheul-Ro, Ra, Yong-Ho

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Growth and characterization of n-AlGaN 1-D structures with varying Al composition using u-GaN seeds von Kang, San, Chatterjee, Uddipta, Um, Dae-Young, Seo, In Seok, Lee, Cheul-Ro

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Solar-Driven Sustainability: III–V Semiconductor for Green Energy Production Technologies von Chandran, Bagavath, Oh, Jeong-Kyun, Lee, Sang-Wook, Um, Dae-Young, Kim, Sung-Un, Veeramuthu, Vignesh, Park, Jin-Seo, Han, Shuo, Lee, Cheul-Ro, Ra, Yong-Ho

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Ultraviolet‑C Photodetector Fabricated Using Si-Doped n‑AlGaN Nanorods Grown by MOCVD von Kang, San, Chatterjee, Uddipta, Um, Dae-Young, Yu, Yeon-Tae, Seo, In-Seok, Lee, Cheul-Ro

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Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD von Um, Dae-Young, Mandal, Arjun, Lee, Da-Som, Park, Ji-Hyeon, Lee, Cheul-Ro

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The synthesis of hybrid nanostructure comprising star-shaped GaN nanowires and Si nanoworms von Park, Ji-Hyeon, Chatterjee, Uddipta, Kang, San, Um, Dae-Young, Lee, Cheul-Ro

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Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission von Park, Ji-Hyeon, Mandal, Arjun, Um, Dae-Young, Kang, San, Lee, Da-som, Lee, Cheul-Ro

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Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures von Um, Dae-Young, Ra, Yong-Ho, Park, Ji-Hyeon, Hong, Ga-Eun, Lee, Cheul-Ro

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Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology von Veeramuthu, Vignesh, Kim, Sung-Un, Lee, Sang-Wook, Navamathavan, R, Chandran, Bagavath, Um, Dae-Young, Oh, Jeong-Kyun, Lee, Min-Seok, Kim, Yong-Ho, Lee, Cheul-Ro, Ra, Yong-Ho

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Fabrication of In x Ga 1−x N/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission von Park, Ji-Hyeon, Mandal, Arjun, Um, Dae-Young, Kang, San, Lee, Da-som, Lee, Cheul-Ro

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Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio a 3-step growth method using MOCVD von Um, Dae-Young, Mandal, Arjun, Lee, Da-Som, Park, Ji-Hyeon, Lee, Cheul-Ro

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