Direct-to-indirect bandgap transitions in ⟨110⟩ silicon nanowires von Jensen, I. J. T., Ulyashin, A. G., Løvvik, O. M.

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Similarity of electronic structure and optical properties of Mg2 NiH4 and Si von Karazhanov, S. Zh, Ulyashin, A. G

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Semiconducting hydrides von Karazhanov, S. Zh, Ulyashin, A. G, Ravindran, P, Vajeeston, P

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Similarity of electronic structure and optical properties of Mg2NiH4 and Si von Karazhanov, S. Zh, Ulyashin, A. G.

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Electron transport and low-temperature electrical and galvanomagnetic properties of zinc oxide and indium oxide films von Kulbachinskii, V. A., Kytin, V. G., Reukova, O. V., Burova, L. I., Kaul, A. R., Ulyashin, A. G.

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Deposition by magnetron sputtering and characterization of indium tin oxide thin films von Mudryi, A.V., Ivaniukovich, A.V., Ulyashin, A.G.

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Impact of Direct Plasma Hydrogenation on Thermal Donor Formation in n-Type CZ Silicon von Rafı́, J. M., Simoen, E., Claeys, C., Huang, Y. L., Ulyashin, A. G., Job, R., Versluys, J., Clauws, P., Lozano, M., Campabadal, F.

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Conducting properties of In2O3:Sn thin films at low temperatures von Kytin, V. G., Kulbachinskii, V. A., Reukova, O. V., Galperin, Y. M., Johansen, T. H., Diplas, S., Ulyashin, A. G.

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Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon von Ulyashin, A G, Job, R, Fahrner, W R, Richard, O, Bender, H, Claeys, C, Simoen, E, Grambole, D

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Analysis of thin layers and interfaces in ITO/a-Si:H/c-Si heterojunction solar cell structures by secondary ion mass spectrometry von Christensen, J.S., Ulyashin, A.G., Maknys, K., Kuznetsov, A.Yu, Svensson, B.G.

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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step von SIMOEN, E, CLAEYS, C, JOB, R, ULYASHIN, A. G, FAHRNER, W. R, TONELLI, G, DE GRVSE, O, CLAUWS, P

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ITO deposited by pyrosol for photovoltaic applications von Chebotareva, A.B., Untila, G.G., Kost, T.N., Jorgensen, S., Ulyashin, A.G.

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Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon von JOB, R, ULYASHIN, A. G, FAHRNER, W. R, IVANOV, A. I, PALMETSHOFER, L

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Phase stability and pressure-induced structural transitions at zero temperature in ZnSiO3 and Zn2SiO4 von Karazhanov, S Zh, Ravindran, P, Vajeeston, P, Ulyashin, A G, Fjellvåg, H, Svensson, B G

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Hydrogen-plasma-enhanced oxygen precipitation in silicon von Markevich, V P, Murin, L I, Lindström, J L, Ulyashin, A G, Job, R, Fahrner, W R, Raiko, V

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μ-Raman investigations of plasma hydrogenated silicon von Job, R., Ulyashin, A. G., Fahrner, W. R., Beaufort, M.-F., Barbot, J.-F.

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Weak localization in ZnO:Ga and ZnO:Al thin films von Reukova, O V, Kytin, V G, Kulbachinskii, V A, Burova, L I, Kaul, A R, Ulyashin, A G

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Features of the hopping conductivity in gallium and cobalt doped ZnO thin films von Kytin, V G, Reukova, O V, Kulbachinskii, V A, Burova, L I, Kaul, A R, Ulyashin, A G

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Formation of deep p-n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment von ULYASHIN, A. G, BUMAY, Y. A, JOB, R, FAHRNER, W. R

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High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures von Stange, Marit, Sunde, Tor Olav, Dahl-Hansen, Runar, Rajput, Kalpna, Seland Graff, Joachim, Belle, Branson D., Ulyashin, Alexander G.

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