Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate von Kwak, Taemyung, Lee, Jonggun, Choi, Uiho, So, Byeongchan, Yoo, Geunho, Kim, Seongwoo, Nam, Okhyun

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Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam von Choi, Uiho, Yoo, Sung Tae, Kim, Minho, So, Byeongchan, Cheon, Changheon, Yang, Mino, Lee, Moonsang, Park, Kyu Chang, Nam, Okhyun

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On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer von Im, Ki-Sik, Choi, Uiho, Kim, Minho, Choi, Jinseok, Kim, Hyun-Seop, Cha, Ho-Young, An, Sung Jin, Nam, Okhyun

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Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method von So, Byeongchan, Lee, Junchae, Cheon, Changheon, Lee, Joohyung, Choi, Uiho, Kim, Minho, Song, Jindong, Chang, Joonyeon, Nam, Okhyun

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Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT von Choi, Uiho, Lee, Kyeongjae, Kwak, Taemyung, Jung, Donghyeop, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Kim, Hyun-Seop, Cha, Ho-Young, Kang, Myoung-Jin, Seo, Kwang-Seok, Nam, Okhyun

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Growth of self-assembled nanovoids embedded AlN layer on a low- temperature buffer by metal organic chemical vapor deposition von Kim, Minho, Choi, Uiho, Kim, Keono, Nam, Okhyun

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Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition von Kwak, Taemyung, Lee, Juhoon, So, Byeongchan, Choi, Uiho, Nam, Okhyun

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Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures von Floriduz, Alessandro, Choi, Uiho, Matioli, Elison

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Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN:Si/AlN DH-HEMT structure von Jung, Donghyeop, Kim, Minho, Choi, Uiho, Kim, Keono, Nam, Okhyun

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Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method von Kim, Jinwan, Choi, Uiho, Pyeon, Jaedo, So, Byeongchan, Nam, Okhyun

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High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate von Choi, Uiho, Kwak, Taemyung, Han, Sanghoon, Kim, Seong-Woo, Nam, Okhyun

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Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers von So, Byeongchan, Kim, Jinwan, Kwak, Taemyung, Kim, Taeyoung, Lee, Joohyoung, Choi, Uiho, Nam, Okhyun

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Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate von Kwak, Taemyung, Han, Sanghun, Choi, Uiho, Kim, Seong-Woo, Nam, Okhyun

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Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz von Kim, Minho, Choi, Uiho, Kim, Keono, Heo, Yunseok, Lee, Kyeongjae, Lee, Sangmin, Nam, Okhyun

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Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5GHz von Kim, Minho, Choi, Uiho, Kim, Keono, Heo, Yunseok, Lee, Kyeongjae, Lee, Sangmin, Nam, Okhyun

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Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz von Kim, Minho, Choi, Uiho, Kim, Keono, Heo, Yunseok, Lee, Kyeongjae, Lee, Sangmin, Nam, Okhyun

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Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5GHz von Kim, Minho, Choi, Uiho, Kim, Keono, Heo, Yunseok, Lee, Kyeongjae, Lee, Sangmin, Nam, Okhyun

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Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures von Choi, Uiho, Shin, Heejin, Kwak, Taemyung, Kim, Seong-Woo, Nam, Okhyun

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor von Choi, Uiho, Jung, Donghyeop, Lee, Kyeongjae, Kwak, Taemyung, Jang, Taehoon, Nam, Yongjun, So, Byeongchan, Nam, Okhyun

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Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures von Nam, Yongjun, Choi, Uiho, Lee, Kyeongjae, Jang, Taehoon, Jung, Donghyeop, Nam, Okhyun

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