Healing Sulfur Vacancies in Monolayer MoS2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors von Yanase, Takashi, Uehara, Fumiya, Naito, Itsuki, Nagahama, Taro, Shimada, Toshihiro

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Smectic A–hexagonal columnar–B7 phase transition of acute-angle bent-core molecules von Lee, Eun-Woo, Hattori, Masaya, Uehara, Fumiya, Tokita, Masatoshi, Kawauchi, Susumu, Watanabe, Junji, Kang, Sungmin

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Three Dimensional Observation and Quantitative Analysis of Fiber Materials von UEHARA, FUMIYA

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PM-14 Three Dimensional Observations and Quantitative Analysis of Functional Polymer Materials von Uehara, Fumiya, Muraoka, Masayoshi, Kaneko, Naoto, Otsuka, Yuji

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Synthesis of Mo1−xNbxS2 thin films by separate-flow chemical vapor deposition with chloride sources von Yanase, Takashi, Watanabe, Sho, Uehara, Fumiya, Weng, Mengting, Nagahama, Taro, Shimada, Toshihiro

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Hydrodynamic Analysis of Density Oscillator von Ueno, Makoto, Uehara, Fumiya, Narahara, Yoshimasa, Watanabe, Yoshio

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Healing Sulfur Vacancies in Monolayer MoS 2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors von Yanase, Takashi, Uehara, Fumiya, Naito, Itsuki, Nagahama, Taro, Shimada, Toshihiro

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Catalytic chemical vapor deposition and structural analysis of MoS2 nanotubes von Weng, Mengting, Zhang, Meiqi, Yanase, Takashi, Uehara, Fumiya, Nagahama, Taro, Shimada, Toshihiro

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Switching of the products by changing the size and shape of catalytic nanoparticles during CVD growth of MoS 2 nanotubes von Mengting, Weng, Yanase, Takashi, Uehara, Fumiya, Watanabe, Sho, Miura, Takuya, Nagahama, Taro, Shimada, Toshihiro

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Catalytic chemical vapor deposition and structural analysis of MoS 2 nanotubes von Weng, Mengting, Zhang, Meiqi, Yanase, Takashi, Uehara, Fumiya, Nagahama, Taro, Shimada, Toshihiro

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Catalytic chemical vapor deposition and structural analysis of MoS^sub 2^ nanotubes von Weng, Mengting, Zhang, Meiqi, Yanase, Takashi, Uehara, Fumiya, Nagahama, Taro, Shimada, Toshihiro

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Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics (II) von Ahmed, SheikhRashel Al, Uehara, Fumiya, Kobayashi, Kyoteru

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Carrier Concentration Dependence of Photoacoustic Spectra of Silicon by a Piezoelectric Transducer Method von Kuwahata, Hiroshi, Muto, Nobuo, Uehara, Fumiya

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Switching of the products by changing the size and shape of catalytic nanoparticles during CVD growth of MoS2 nanotubesElectronic supplementary information (ESI) available. See DOI... von Mengting, Weng, Yanase, Takashi, Uehara, Fumiya, Watanabe, Sho, Miura, Takuya, Nagahama, Taro, Shimada, Toshihiro

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Carrier Concentration Dependence of Photoacoustic Signal Intensity of Silicon von Kuwahata, Hiroshi, Muto, Nobuo, Uehara, Fumiya, Matsumori, Tokue

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Smectic A-hexagonal columnar-B7 phase transition of acute-angle bent-core moleculesElectronic supplementary information (ESI) available: Fig. S1. POM micrographs of SmA and B7 phas... von Lee, Eun-Woo, Hattori, Masaya, Uehara, Fumiya, Tokita, Masatoshi, Kawauchi, Susumu, Watanabe, Junji, Kang, Sungmin

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Fabrication of MoS2 monolayer film by CVD method and effect by sulfur annealing von Uehara, Fumiya, Yanase, Takashi, Nagahama, Taro, Shimada, Toshihiro

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Synthesis of MoxNb1-xS2 thin films by chemical vapor deposition von Watanabe, Sho, Uehara, Fumiya, Yanase, Takashi, Nagahama, Taro, Shimada, Toshihiro

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Impurity effect on recombination processes in InP von YOSHINAGA, H, MATSUMORI, T, UEHARA, F

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Ferrule and optical connector von Omura, Masaki, Shimazu, Takayuki, Uehara, Fumiya

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