GaN power devices: current status and future challenges von Ueda, Tetsuzo

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GaN-on-Si Power Technology: Devices and Applications von Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu

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Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient von Yamada, Takahiro, Ito, Joyo, Asahara, Ryohei, Watanabe, Kenta, Nozaki, Mikito, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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GaN transistors on Si for switching and high-frequency applications von Ueda, Tetsuzo, Ishida, Masahiro, Tanaka, Tsuyoshi, Ueda, Daisuke

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Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor von Tanaka, Kenichiro, Morita, Tatsuo, Umeda, Hidekazu, Kaneko, Saichiro, Kuroda, Masayuki, Ikoshi, Ayanori, Yamagiwa, Hiroto, Okita, Hideyuki, Hikita, Masahiro, Yanagihara, Manabu, Uemoto, Yasuhiro, Takahashi, Satoru, Ueno, Hiroaki, Ishida, Hidetoshi, Ishida, Masahiro, Ueda, Tetsuzo

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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation von Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.

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Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures von Watanabe, Kenta, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors von Tanaka, Kenichiro, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi

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Recent advances in GaN transistors for future emerging applications von Yanagihara, Manabu, Uemoto, Yasuhiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke

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Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor von Tanaka, Kenichiro, Umeda, Hidekazu, Ishida, Hidetoshi, Ishida, Masahiro, Ueda, Tetsuzo

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Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire von Kuroda, Masayuki, Ishida, Hidetoshi, Ueda, Tetsuzo, Tanaka, Tsuyoshi

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Separation of Thin GaN from Sapphire by Laser Lift-Off Technique von Ueda, Tetsuzo, Ishida, Masahiro, Yuri, Masaaki

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Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C von Ishii, Hajime, Ueno, Hiroaki, Ueda, Tetsuzo, Endoh, Tetsuo

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Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties von Nozaki, Mikito, Watanabe, Kenta, Yamada, Takahiro, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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GaN on Si Technologies for Power Switching Devices von Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke

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Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors von Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu

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99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors von Morita, T, Tamura, S, Anda, Y, Ishida, M, Uemoto, Y, Ueda, T, Tanaka, T, Ueda, D

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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors von Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions von Nozaki, Mikito, Ito, Joyo, Asahara, Ryohei, Nakazawa, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition von Takizawa, Toshiyuki, Nakazawa, Satoshi, Ueda, Tetsuzo

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