Single crystal growth of small-angle-grain-boundary-free Mg2Si via vertical Bridgman method von Masubuchi, Ryohei, Alinejad, Babak, Hara, Yoshiaki, Udono, Haruhiko

Volltext

Epitaxial growth of high-quality Mg3Sb2 thin films on annealed c-plane Al2O3 substrates and their thermoelectric properties von Ayukawa, Akito, Kiridoshi, Nozomu, Yamamoto, Wakaba, Yasuhara, Akira, Udono, Haruhiko, Sakane, Shunya

Volltext

Crystal growth and characterization of Mg2Si for IR-detectors and thermoelectric applications von Udono, Haruhiko, Tajima, Hiroyuki, Uchikoshi, Masahito, Itakura, Masaru

Volltext

Local structure analysis of Sb, Bi, and Ag dopant atoms in Mg2Si semiconductor by x-ray absorption spectroscopy and first-principles calculation von Kitaura, Mamoru, Wantanabe, Shinta, Ina, Toshiaki, Imai, Motoharu, Udono, Haruhiko, Ishizaki, Manabu, Yamane, Hisanori, Tanimoto, Taku, Ohnishi, Akimasa

Volltext

Characterization of iron in silicon by low-temperature photoluminescence and deep-level transient spectroscopy von Nakamura, Minoru, Murakami, Susumu, Udono, Haruhiko

Volltext

Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing von Mori, Masahiro, Shimotsuma, Yasuhiko, Sei, Tomoaki, Sakakura, Masaaki, Miura, Kiyotaka, Udono, Haruhiko

Volltext

An Approach to Optimize the Thermoelectric Properties of III–V Ternary InGaSb Crystals by Defect Engineering via Point Defects and Microscale Compositional Segregations von Kumar, Velu Nirmal, Hayakawa, Yasuhiro, Udono, Haruhiko, Inatomi, Yuko

Volltext

Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy von Nakamura, Minoru, Murakami, Susumu, Udono, Haruhiko

Volltext

Thin film of guest-free type-II silicon clathrate on Si(111) wafer von Kume, Tetsuji, Ohashi, Fumitaka, Sakai, Kentaro, Fukuyama, Atsuhiko, Imai, Motoharu, Udono, Haruhiko, Ban, Takayuki, Habuchi, Hitoe, Suzuki, Hidetoshi, Ikari, Tetsuo, Sasaki, Shigeo, Nonomura, Shuichi

Volltext

Optical transmittance and reflectance studies and evidence of weak electron–phonon interaction in Type-I Ge clathrate Ba8Ga16Ge30 von Udono, Haruhiko, Imai, Motoharu, Kojima, Shuhei, Kume, Tetsuji, Tanigaki, Katsumi, Tajima, Hiroyuki

Volltext

Semiconducting Silicides Green Technology

Volltext

Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy von Nakamura, Minoru, Murakami, Susumu, Udono, Haruhiko

Volltext

Effects of dopant type and concentration on surface recombination velocity in hydrogen-terminated silicon von Araki, Nobue, Udono, Haruhiko

Volltext

Semiconducting behavior of type-I Si clathrate K8Ga8Si38 von Imai, Motoharu, Sato, Akira, Udono, Haruhiko, Imai, Yoji, Tajima, Hiroyuki

Volltext

Melt growth and characterization of Mg2Si bulk crystals von TAMURA, Daiki, NAGAI, Ryo, SUGIMOTO, Kazuhiro, UDONO, Haruhiko, KIKUMA, Isao, TAJIMA, Hiroyuki, OHSUGI, Isao J

Volltext

Spectral characterization of Mg2Si pn -junction diode depending on RTA periods von Takezaki, Masaaki, Yamanaka, Yusuke, Uchikoshi, Masahito, Udono, Haruhiko

Volltext

Solution growth and optical characterization of Mn11Si19 von Iioka, Masaru, Ishida, Daisuke, Kojima, Shyuhei, Udono, Haruhiko

Volltext

Thermoelectric properties of Zn-doped In0.95Ga0.05Sb crystals grown by directional solidification von Velu, Nirmal Kumar, Hayakawa, Yasuhiro, Udono, Haruhiko, Inatomi, Yuko

Volltext

Thermoelectric properties of Zn-doped In.sub.0.95Ga.sub.0.05Sb crystals grown by directional solidification von Velu, Nirmal Kumar, Hayakawa, Yasuhiro, Udono, Haruhiko, Inatomi, Yuko

Volltext

Thermal expansion of semiconducting silicides β-FeSi2 and Mg2Si von Imai, Motoharu, Isoda, Yukihiro, Udono, Haruhiko

Volltext