Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy von Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., Riechert, H.

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Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions von Takagaki, Y, Ramsteiner, M, Jahn, U, Jenichen, B, Trampert, A

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Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy von Gaucher, S., Jenichen, B., Kalt, J., Jahn, U., Trampert, A., Herfort, J.

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Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001) von Jenichen, B., Herfort, J., Jahn, U., Trampert, A., Riechert, H.

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Photon anti-bunching in acoustically pumped quantum dots von Couto, O. D. D., Lazić, S., Iikawa, F., Stotz, J. A. H., Jahn, U., Hey, R., Santos, P. V.

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The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons von Galves, L.A., Wofford, J.M., Soares, G.V., Jahn, U., Pfüller, C., Riechert, H., Lopes, J.M.J.

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Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks von Calleja, E., Ristić, J., Fernández-Garrido, S., Cerutti, L., Sánchez-García, M. A., Grandal, J., Trampert, A., Jahn, U., Sánchez, G., Griol, A., Sánchez, B.

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Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission von Albert, S., Bengoechea-Encabo, A., Sanchez-Garcia, M. A., Calleja, E., Jahn, U.

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Transport properties in a Sb-Te binary topological-insulator system von Takagaki, Y, Giussani, A, Tominaga, J, Jahn, U, Calarco, R

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Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks von Bengoechea-Encabo, A., Barbagini, F., Fernandez-Garrido, S., Grandal, J., Ristic, J., Sanchez-Garcia, M.A., Calleja, E., Jahn, U., Luna, E., Trampert, A.

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Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy von Sinito, C, Corfdir, P, Pfüller, C, Gao, G, Bartolomé, J, Kölling, S, Rodil Doblado, A, Jahn, U, Lähnemann, J, Auzelle, T, Zettler, J. K, Flissikowski, T, Koenraad, P, Grahn, H. T, Geelhaar, L, Fernández-Garrido, S, Brandt, O

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Current path in light emitting diodes based on nanowire ensembles von Limbach, F, Hauswald, C, Lähnemann, J, Wölz, M, Brandt, O, Trampert, A, Hanke, M, Jahn, U, Calarco, R, Geelhaar, L, Riechert, H

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Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy von Sinito, C, Corfdir, P, Pfüller, C, Gao, G, Bartolomé, J, Kölling, S, Doblado, A. Rodil, Jahn, U, Lähnemann, J, Auzelle, T, Zettler, J. K, Flissikowski, T, Koenraad, P, Grahn, H. T, Geelhaar, L, Fernández-Garrido, S, Brandt, O

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Multiple state transport deduced by weak antilocalization and electron-electron interaction effects in Sbx Te1−x layers von Takagaki, Y, Jahn, U, Giussani, A, Calarco, R

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Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires von Musolino, M., Tahraoui, A., Limbach, F., Lähnemann, J., Jahn, U., Brandt, O., Geelhaar, L., Riechert, H.

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Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions von Wofford, J M, Oliveira, M H, Schumann, T, Jenichen, B, Ramsteiner, M, Jahn, U, Fölsch, S, Lopes, J M J, Riechert, H

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Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates von Takagaki, Y., Papadogianni, A., Jenichen, B., Jahn, U., Bierwagen, O.

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Structural properties of Co2TiSi films on GaAs(001) von Jenichen, B., Herfort, J., Hanke, M., Jahn, U., Kong, X., Dau, M. T., Trampert, A., Kirmse, H., Erwin, S. C.

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Generation of dislocation clusters by glide m-planes in semipolar GaN layers von Okada, N., Ishikawa, A., Yamane, K., Tadatomo, K., Jahn, U., Grahn, H. T.

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Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001) von Jenichen, B, Jahn, U, Nikulin, A, Herfort, J, Kirmse, H

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