Photoexcited carrier trapping and recombination at Fe centers in GaN von Uždavinys, T. K., Marcinkevičius, S., Leach, J. H., Evans, K. R., Look, D. C.

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Multimode scanning near-field photoluminescence spectroscopy and its application for studies of ingan epitaxial layers and quantum wells von Marcinkevičius, Saulius, UŽdavinys, Tomas Kristijonas, Ivanov, Ruslan, Mensi, Mounir

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Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations von Butte, R, Lahourcade, L, Uzdavinys, TK, Callsen, G, Mensi, M, Glauser, M, Rossbach, G, Martin, D, Carlin, JF, Marcinkevicius, S, Grandjean, N

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Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells von Ivanov, Ruslan, Marcinkevičius, Saulius, Uždavinys, Tomas K., Kuritzky, Leah Y., Nakamura, Shuji, Speck, James S.

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy von Marcinkevičius, Saulius, Uždavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

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Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence von Uždavinys, Tomas K., Becerra, Daniel L., Ivanov, Ruslan, DenBaars, Steven P., Nakamura, Shuji, Speck, James S., Marcinkevičius, Saulius

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Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy von Mensi, Mounir, Ivanov, Ruslan, Uždavinys, Tomas K, Kelchner, Kathryn M, Nakamura, Shuji, DenBaars, Steven P, Speck, James S, Marcinkevičius, Saulius

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Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy von Marcinkevicius, Saulius, Uzdavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

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