Efficient and bright organic light-emitting diodes on single-layer graphene electrodes von Li, Ning, Oida, Satoshi, Tulevski, George S., Han, Shu-Jen, Hannon, James B., Sadana, Devendra K., Chen, Tze-Chiang

Volltext

Challenges for silicon technology scaling in the Nanoscale Era von Tze-chiang Chen

Volltext

Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition von TZE CHIANG CHEN, PENG, Cheng-Yi, TSENG, Chih-Hung, LIAO, Ming-Han, CHEN, Mei-Hsin, WU, Chih-I, CHERN, Ming-Yau, TZENG, Pei-Jer, CHEE WEE LIU

Volltext

Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface von Kim, Jeehwan, Abou-Kandil, Ahmed I., Hong, Augustin J., Saad, Mohamed M., Sadana, Devendra K., Chen, Tze-Chiang

Volltext

Nanoscale chemical templating of Si nanowires seeded with Al von Khayyat, Maha M, Wacaser, Brent A, Reuter, Mark C, Ross, Frances M, Sadana, Devendra K, Chen, Tze-Chiang

Volltext

Device technology innovation for exascale computing von Tze-chiang Chen

Volltext

Mechanism of Threshold Voltage Shift (Δ V th ) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs von Liu, Chuan-Hsi, Lee, Ming T., Lin, Chih-Yung, Chen, Jenkon, Loh, Y. T., Liou, Fu-Tai, Schruefer, Klaus, Katsetos, Anastasios A., Yang, Zhijian, Rovedo, Nivo, Hook, Terence B., Wann, Clement, Chen, Tze-Chiang

Volltext

Challenges for silicon technology scaling in the nanoscale era von Tze-chiang Chen

Volltext

Characterization of the Ultrathin \hbox and Hf-Silicate Films Grown by Atomic Layer Deposition von Chen, Tze Chiang, Peng, Cheng-Yi, Tseng, Chih-Hung, Liao, Ming-Han, Chen, Mei-Hsin, Wu, Chih-I, Chern, Ming-Yau, Tzeng, Pei-Jer, Liu, Chee Wee

Volltext

Overcoming research challenges for CMOS scaling: industry directions von Tze-Chiang Chen

Volltext bestellen

On the temperature dependence of majority carrier transport in heavily arsenic-doped polycrystalline silicon thin films von CRESSLER, J. D, WEI HWANG, TZE-CHIANG CHEN

Volltext

A 23-ps/2.1-mW ECL gate with an AC-coupled active pull-down emitter-follower stage von Kai-Yap Toh, Ching-Te Chuang, Tze-Chiang Chen, Warnock, J.D.

Volltext

Innovation in solid state devices for exascale computing von Tze-chiang Chen

Volltext

On the narrow-emitter effect of advanced shallow-profile bipolar transistors von Li, G.P., Chuang, C.T., Chen, T.-C., Ning, T.H.

Volltext

Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors von Lu, P.-F., Chen, T.-C.

Volltext

Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter von Lu, P.-F., Chen, T.-C., Saccomango, M.J.

Volltext

Design considerations of high-performance narrow-emitter bipolar transistors von Tang, D.D., Tze-Chiang Chen, Ching-Te Chuang, Li, G.P., Stork, J.M.C., Ketchen, M.B., Hackbarth, E., Ning, T.H.

Volltext

Sub-300-ps CBL circuits von Widemann, S.K., Chen, T.-C., Chuang, C.-T., Heuber, K., Wendel, D.F., Warnock, J., Li, G.P., Chin, K., Ning, T.H.

Volltext

An advanced bipolar transistor with self-aligned ion-implanted base and W/poly emitter von TZE-CHIANG CHEN, CHUANG, C. T, LI, G. P, SURYADEVER BASVAIAH, DENNY DUAN-LEE TANG, KETCHEN, M. B, NING, T. H

Volltext

Bipolar transistor with self-aligned lateral profile von Li, G.P., Tze-Chiang Chen, Ching-Te Chuang, Stork, J.M.C., Tang, D.D., Ketchen, M.B., Li-Kong Wang

Volltext