Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing von Tyschenko, I. E., Spesivtsev, E. V., Shklyaev, A. A., Popov, V. P.

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Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films von Tyschenko, I. E., Volodin, V. A., Popov, V. P.

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Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase von Tyschenko, I. E., Khmelnitsky, R. A., Saraykin, V. V., Volodin, V. A., Popov, V. P.

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Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers von Tyschenko, I. E., Popov, I. V., Spesivtsev, E. V.

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Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices von Tyschenko, I. E., Zhang, R.

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Robust semiconductor-on-ferroelectric structures with hafnia–zirconia–alumina UTBOX stacks compatible with CMOS technology von Popov, V P, Antonov, V A, Tikhonenko, F V, Tarkov, S M, Gutakovskii, A K, Tyschenko, I E, Miakonkikh, A V, Lomov, A A, Rogozhin, A E, Rudenko, K V

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Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions von Tyschenko, I. E., Voelskow, M., Si, Zh, Popov, V. P.

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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers von Rebohle, L., von Borany, J., Yankov, R. A., Skorupa, W., Tyschenko, I. E., Fröb, H., Leo, K.

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Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining von Tyschenko, I. E., Zhanaev, E. D., Popov, V. P.

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Diffusion and Interaction of In and As Implanted into SiO2 Films von Tyschenko, I. E., Voelskow, M., Mikhaylov, A. N., Tetelbaum, D. I.

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure von Tyschenko, I. E., Cherkov, A. G.

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Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure von Tyschenko, I. E., Krivyakin, G. K., Volodin, V. A.

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films von Tyschenko, I. E., Cherkov, A. G., Volodin, V. A., Voelskow, M.

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Radiative recombination in silicon-on-insulator layers implanted with high dose of H+ ions von Tyschenko, I.E., Volodin, V.A., Popov, V.P.

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Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films von Skorupa, W., Yankov, R. A., Tyschenko, I. E., Fröb, H., Böhme, T., Leo, K.

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Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO.sub.2 Matrices von Tyschenko, I. E, Zhang, R

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Properties of silicon oversaturated with implanted hydrogen von Popov, V.P, Tyschenko, I.E, Safronov, L.N, Naumova, O.V, Antonova, I.V, Gutakovsky, A.K, Talochkin, A.B

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Radiation Hardened Silicon-on-Insulator Structures with N(+) Ion Modified Buried SiO(2) Layer von Tyschenko, I E, Popov, V P

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An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses von Tyschenko, I. E.

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An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses von Tyschenko, I. E.

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