Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor von Vexler, M I, Tyaginov, S E, Shulekin, A F

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Analysis of the Features of Hot-Carrier Degradation in FinFETs von Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

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Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs von Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

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Determination of correlation length for thickness fluctuations in thin oxide and fluoride films von Tyaginov, S E, Vexler, M I, Sokolov, N S, Suturin, S M, Banshchikov, A G, Grasser, T, Meinerzhagen, B

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Se... von Tyaginov, S. E., Makarov, A. A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., Grasser, T.

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Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures von Tyaginov, S.E., Vexler, M.I., El Hdiy, A., Gacem, K., Zaporojtchenko, V.

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Interface traps density-of-states as a vital component for hot-carrier degradation modeling von Tyaginov, S.E., Starkov, I.A., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J.M., Enichlmair, H., Karner, M., Kernstock, Ch, Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T.

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Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric von Tyaginov, S. E., Illarionov, Yu. Yu, Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T.

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Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures von Tyaginov, S.E., Vexler, M.I., Shulekin, A.F., Grekhov, I.V.

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Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111) von Sokolov, N.S., Grekhov, I.V., Ikeda, S., Kaveev, A.K., Krupin, A.V., Saiki, K., Tsutsui, K., Tyaginov, S.E., Vexler, M.I.

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High insulating quality CaF2 pseudomorphic films on Si(111) von Sokolov, N. S., Kaveev, A. K., Krupin, A. V., Tyaginov, S. E., Vexler, M. I., Ikeda, S., Tsutsui, K., Saiki, K.

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Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures von Suturin, S. M., Banshchikov, A. G., Sokolov, N. S., Tyaginov, S. E., Vexler, M. I.

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Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon von Grekhov, I.V., Kareva, G.G., Tyaginov, S.E., Vexler, M.I.

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Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure von Delimova, L. A., Grekhov, I. V., Mashovets, D. V., Tyaginov, S. E., Shin, Sangmin, Koo, June-Moo, Kim, Suk-Pil, Park, Youngsoo

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Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data von Tyaginov, S. É., Vexler, M. I., Grekhov, I. V., Zaporojtchenko, V.

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Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution von Tyaginov, S.E., Vexler, M.I., Shulekin, A.F., Grekhov, I.V.

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Luminescence spectra of an Al∕SiO2∕p-Si tunnel metal-oxide-semiconductor structure von Yoder, P. D., Vexler, M. I., Shulekin, A. F., Asli, N., Gastev, S. V., Grekhov, I. V., Seegebrecht, P., Tyaginov, S. E., Zimmermann, H.

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An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress von El Hdiy, A., Khlil, R., Jin, Y., Tyaginov, S. E., Shulekin, A. F., Vexler, M. I.

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TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures von Illarionov, Yu.Yu, Vexler, M.I., Karner, M., Tyaginov, S.E., Cervenka, J., Grasser, T.

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Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness von Khlil, R., El Hdiy, A., Shulekin, A.F., Tyaginov, S.E., Vexler, M.I.

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