Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN von Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Resistivity control in unintentionally doped GaN films grown by MOCVD von Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.

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GaN decomposition in H2 and N2 at MOVPE temperatures and pressures von KOLESKE, D. D, WICKENDEN, A. E, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys von Twigg, M.E., Tomasulo, S., Stevens, M.A., Mahadik, N.A., Kotulak, N.A., Yakes, M.K.

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Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence von Picard, Y.N., Liu, K.X., Stahlbush, R.E., Twigg, M.E.

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Assessing Hexagonal Boron Nitride Crystal Quality by Defect Sensitive Etching von Hoffman, T., Zhang, Y., Liu, S., Khan, N., Twigg, M.E., Bassim, N.D., Edgar, J.H.

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Growth of high quality, epitaxial InSb nanowires von Park, Hyun D., Prokes, S.M., Twigg, M.E., Ding, Yong, Wang, Zhong Lin

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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging von Picard, Y.N., Twigg, M.E., Caldwell, J.D., Eddy, C.R., Mastro, M.A., Holm, R.T.

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Structure and composition of Ba0.5Sr0.5TiO3 films deposited on (001) MgO substrates and the influence of sputtering pressure von Twigg, M.E., Alldredge, L.M.B., Chang, W., Podpirka, A., Kirchoefer, S.W., Pond, J.M.

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GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures von Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., Twigg, M.E.

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Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy von Hobart, K.D., Godbey, D.J., Twigg, M.E., Fatemi, M., Thompson, P.E., Simons, D.S.

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Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures von Katz, M.B., Twigg, M.E., Maximenko, S.I., Bassim, N.D., Mahadik, N.A., Jernigan, G.G., Canedy, C.L., Abell, J., Affouda, C.A.

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Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs von Warner, Jeffrey H., Inguimbert, Christophe, Twigg, Mark E., Messenger, Scott R., Walters, Robert J., Romero, Manuel J., Summers, Geoffrey P.

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Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates von Liu, S.T., Allen, L.P., Anc, M.J., Jenkins, W.C., Hughes, H.L., Twigg, M.E., Lawrence, R.K.

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps von Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.

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Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT von Mastro, M.A., Eddy, C.R., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H.

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The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys von Wickenden, A. E., Koleske, D. D., Henry, R. L., Gorman, R. J., Twigg, M. E., Fatemi, M., Freitas, J. A., Moore, W. J.

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Effects of Dislocations and Stacking Faults on the Reliability of 4H-SiC PiN Diodes von Stahlbush, R.E., Liu, K.X., Twigg, M.E.

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