Resistivity control in unintentionally doped GaN films grown by MOCVD von Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN von Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E

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Formation and stability of crystalline and amorphous Al2O3 layers deposited on Ga2O3 nanowires by atomic layer epitaxy von Katz, M. B., Twigg, M. E., Prokes, S. M.

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Si-assisted growth of InAs nanowires von Park, Hyun D., Prokes, S. M., Twigg, M. E., Cammarata, Robert C., Gaillot, Anne-Claire

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes von Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates von Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging von Twigg, M. E., Picard, Y. N., Caldwell, J. D., Eddy, C. R., Mastro, M. A., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

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Growth and characterization of III-N bulk crystals von Frazier, R. M., Feigelson, B. N., Twigg, M. E., Murthy, M., Freitas, J. A.

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps von Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.

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Energy-Filtered Transmission Electron Microscope Tomography of Silicon Nanoparticles in Silicon Dioxide Deposited with High Density Plasma Chemical Vapor Deposition von Brintlinger, T., Twigg, M. E., Hughes, H. L.

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The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys von Wickenden, A. E., Koleske, D. D., Henry, R. L., Gorman, R. J., Twigg, M. E., Fatemi, M., Freitas, J. A., Moore, W. J.

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The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys von Twigg, M.E., Tomasulo, S., Stevens, M.A., Mahadik, N.A., Kotulak, N.A., Yakes, M.K.

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Partial dislocations and stacking faults in 4H-SiC PiN diodes von TWIGG, M. E, STAHLBUSH, R. E, FATEMI, M, ARTHUR, S. D, FEDISON, J. B, TUCKER, J. B, WANG, S

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Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT von Mastro, M.A., Eddy, C.R., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H.

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Epitaxial Si-based tunnel diodes von Thompson, P.E, Hobart, K.D, Twigg, M.E, Rommel, S.L, Jin, N, Berger, P.R, Lake, R, Seabaugh, A.C, Chi, P.H, Simons, D.S

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Properties of Si-doped GaN films grown using multiple AlN interlayers von Koleske, D. D., Twigg, M. E., Wickenden, A. E., Henry, R. L., Gorman, R. J., Freitas, J. A., Fatemi, M.

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Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes von Chow, T. Paul, Sumakeris, Joseph J., Zhu, Lin, Twigg, Mark E., Stahlbush, Robert E., Tang, Yi, Losee, Peter A., Irvine, Kenneth G., Wang, W.

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Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a -plane sapphire substrates von Fatemi, M., Wickenden, A. E., Koleske, D. D., Twigg, M. E., Freitas, J. A., Henry, R. L., Gorman, R. J.

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Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum von Hobart, K. D., Twigg, M. E., Kub, F. J., Desmond, C. A.

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