beta-Ga2O3 Solid-State Devices for Fast Neutron Detection von Szalkai, D., Galazka, Z., Irmscher, K., Tutto, P., Klix, A., Gehre, D.

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Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature von Szalkai, D., Ferone, R., Issa, F., Klix, A., Lazar, M., Lyoussi, A., Ottaviani, L., Tutto, P., Vervisch, V.

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beta$ -Ga 2 O 3 Solid-State Devices for Fast Neutron Detection von Szalkai, D., Galazka, Z., Irmscher, K., Tutto, P., Klix, A., Gehre, D.

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[Formula Omitted]-Ga2O3 Solid-State Devices for Fast Neutron Detection von Szalkai, D, Galazka, Z, Irmscher, K, Tutto, P, Klix, A, Gehre, D

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Carrier lifetime analysis by photoconductance decay and free carrier absorption measurements von SCHULZE, H.-J, FROHNMEYER, A, NIEDERNOSTHEIDE, F.-J, HILLE, F, TÜTTO, P, PAVELKA, T, WACHUTKA, G

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Integrated electrical and optical characterization of large area thin film photovoltaic materials von Szitasi, G., Korsos, F., Selmeczi, D., Takacs, O., Novinics, F., Tutto, P., Findlay, A., Wilson, M.

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Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance von Everaert, JL, Rosseel, E., Meszaros, A., Kis-Szabo, K., Tutto, P., Pap, A., Pavelka, T., Wilson, Marshall, Findlay, A., Edelman, P., Lagowski, J.

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Analytical tools for the characterization of power devices von SCHULZE, H.-J, FROHNMEYER, A, NIEDERNOSTHEIDE, F.-J, SIMMNACHER, B, KOLBESEN, B. O, TÜTTO, P, PAVELKA, T, WACHUTKA, G

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Identification possibility of metallic impurities in p-type silicon by lifetime measurement von HORANYI, T. S, TÜTTO, P, KOVACSICS, C

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Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts von Horváth, ZsJ, Gyúró, I, Németh-Sallay, M, Tüttö, P

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Insulator polarization effect in quasi-static and high-frequency C(V) curves von Tüttő, P., Balázs, J.

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Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon von Biró, L.P., Gyulai, J., Khanh, N.Q., Tüttő, P.

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Charge carrier lifetime modification in silicon by high energy H + or He + ion implantation von Khánh, N.Q., Tüttő, P., Buiu, O., Jároli, E.N., Bíró, L.P., Manuaba, A., Gyulai, J.

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Electrochemical etching and profiling of silicon von Horányi, T.S., Tüttö, P.

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In situ bulk lifetime measurement on silicon with a chemically passivated surface von Horányi, T.S., Pavelka, T., Tüttö, P.

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Charge carrier lifetime modification in silicon by high energy H(+), He(+) ion implantation von Khanh, N Q, Jaroli, E N, Biro, L P, Mohacsy, T, Gyulai, J, Tutto, P, Kovacsics, C, Buiu, O, Paszti, F, Manuaba, A

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Improved method for depth profiling of multilayer structures von Horányi, T.S., Tüttö, P., Endrédi, G.

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Investigation of Recombination Properties of Ti Double Donor in Si von Köster, L., Pavelka, T., Ferenczi, G., Tütto, P.

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Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance von Everaert, JL, Rosseel, E., Meszaros, A., Kis-Szabo, K., Tutto, P., Pap, A., Pavelka, T., Wilson, Marshall, Findlay, A., Jastrzebski, L., Lagowski, J.

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Near-Interface Concentration Reduction in n-Type Au/Cr--GaAs Schottky Contacts von Horvath, Z J, Gyuro, I, Nemeth-Sallay, M, Tutto, P

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