Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes von Slawinska, J., Muziol, G., Siekacz, M., Turski, H., Hajdel, M., Zak, M., Feduniewicz-Zmuda, A., Staszczak, G., Skierbiszewski, C.

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Stack of two III-nitride laser diodes interconnected by a tunnel junction von Siekacz, M, Muziol, G, Hajdel, M, Żak, M, Nowakowski-Szkudlarek, K, Turski, H, Sawicka, M, Wolny, P, Feduniewicz-Żmuda, A, Stanczyk, S, Moneta, J, Skierbiszewski, C

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Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy von Skierbiszewski, C, Turski, H, Muziol, G, Siekacz, M, Sawicka, M, Cywi ski, G, Wasilewski, Z R, Porowski, S

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Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction von Pieniak, K., Chlipala, M., Turski, H., Trzeciakowski, W., Muziol, G., Staszczak, G., Kafar, A., Makarowa, Grzanka, E., Grzanka, S., Skierbiszewski, C., Suski, T.

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III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources von Muziol, G., Hajdel, M., Siekacz, M., Turski, H., Pieniak, K., Bercha, A., Trzeciakowski, W., Kudrawiec, R., Suski, T., Skierbiszewski, C.

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Electrical transport properties of highly doped N-type GaN materials von Konczewicz, L, Litwin-Staszewska, E, Zajac, M, Turski, H, Bockowski, M, Schiavon, D, Chlipała, M, Iwinska, M, Nita, P, Juillaguet, S, Contreras, S

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Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy von Muziol, G., Hajdel, M., Turski, H., Nomoto, K., Siekacz, M., Nowakowski-Szkudlarek, K., Zak, M., Jena, D., Xing, H. G., Perlin, P., Skierbiszewski, C.

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Stacking faults in plastically relaxed InGaN epilayers von Moneta, J, Grzanka, E, Turski, H, Skierbiszewski, C, Smalc-Koziorowska, J

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Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C von Chèze, C., Feix, F., Lähnemann, J., Flissikowski, T., Kryśko, M., Wolny, P., Turski, H., Skierbiszewski, C., Brandt, O.

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Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers von Turski, H., Siekacz, M., Wasilewski, Z.R., Sawicka, M., Porowski, S., Skierbiszewski, C.

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Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy... von Sawicka, M., Wolny, P., Kryśko, M., Turski, H., Szkudlarek, K., Grzanka, S., Skierbiszewski, C.

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Strain relaxation in semipolar ( 20 2 ¯ 1 ) InGaN grown by plasma assisted molecular beam epitaxy von Sawicka, M., Kryśko, M., Muziol, G., Turski, H., Siekacz, M., Wolny, P., Smalc-Koziorowska, J., Skierbiszewski, C.

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Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy von Sawicka, M., Feduniewicz-Żmuda, A., Kryśko, M., Turski, H., Muziol, G., Siekacz, M., Wolny, P., Skierbiszewski, C.

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Cyan laser diode grown by plasma-assisted molecular beam epitaxy von Turski, H., Muziol, G., Wolny, P., Grzanka, S., Cywiński, G., Sawicka, M., Perlin, P., Skierbiszewski, C.

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Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy von Muziol, G., Siekacz, M., Nowakowski-Szkudlarek, K., Hajdel, M., Smalc-Koziorowska, J., Feduniewicz-Żmuda, A., Grzanka, E., Wolny, P., Turski, H., Wiśniewski, P., Perlin, P., Skierbiszewski, C.

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Determination of gain in AlGaN cladding free nitride laser diodes von Muziol, G., Turski, H., Siekacz, M., Sawicka, M., Wolny, P., Perlin, P., Skierbiszewski, C.

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Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy von Siekacz, M., Sawicka, M., Turski, H., Cywiński, G., Khachapuridze, A., Perlin, P., Suski, T., Boćkowski, M., Smalc-Koziorowska, J., Kryśko, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Wasilewski, Z., Porowski, S., Skierbiszewski, C.

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MBE fabrication of III-N-based laser diodes and its development to industrial system von Skierbiszewski, C., Siekacz, M., Turski, H., Muziol, G., Sawicka, M., Perlin, P., Wasilewski, Z.R., Porowski, S.

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High power nitride laser diodes grown by plasma assisted molecular beam epitaxy von Muziol, G., Siekacz, M., Turski, H., Wolny, P., Grzanka, S., Grzanka, E., Feduniewicz-Żmuda, A., Borysiuk, J., Sobczak, K., Domagała, J., Nowakowska-Siwińska, A., Makarowa, I., Perlin, P., Skierbiszewski, C.

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Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions von Sawicka, M., Chèze, C., Turski, H., Smalc-Koziorowska, J., Kryśko, M., Kret, S., Remmele, T., Albrecht, M., Cywiński, G., Grzegory, I., Skierbiszewski, C.

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