Proton on Metal Fission Environments in an IC Package: An RHA Evaluation Method von Turflinger, T. L., Clymer, D. A., Mason, L. W., Stone, S., George, J. S., Koga, R., Beach, E., Huntington, K.

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RHA Implications of Proton on Gold-Plated Package Structures in SEE Evaluations von Turflinger, T. L., Clymer, D. A., Mason, L. W., Stone, S., George, J. S., Savage, M., Koga, R., Beach, E., Huntington, K.

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Digital Single Event Transient Trends With Technology Node Scaling von Benedetto, J.M., Eaton, P.H., Mavis, D.G., Gadlage, M., Turflinger, T.

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Response Variability in Commercial MOSFET SEE Qualification von George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J-M, Titus, J., Sivertz, M.

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Heavy ion-induced digital single-event transients in deep submicron Processes von Benedetto, J., Eaton, P., Avery, K., Mavis, D., Gadlage, M., Turflinger, T., Dodd, P.E., Vizkelethyd, G.

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Variation of digital SET pulse widths and the implications for single event hardening of advanced CMOS processes von Benedetto, J.M., Eaton, P.H., Mavis, D.G., Gadlage, M., Turflinger, T.

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Digital Device Error Rate Trends in Advanced CMOS Technologies von Gadlage, M.J., Eaton, P.H., Benedetto, J.M., Carts, M., Vivian Zhu, Turflinger, T.L.

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Single event transient pulsewidth measurements using a variable temporal latch technique von Eaton, P., Benedetto, J., Mavis, D., Avery, K., Sibley, M., Gadlage, M., Turflinger, T.

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Comparison of heavy ion and proton induced combinatorial and sequential logic error rates in a deep submicron process von Gadlage, M.J., Eaton, P.H., Benedetto, J.M., Turflinger, T.L.

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Frequency domain analysis of analog single-event transients in linear circuits von Boulghassoul, Y., Massengill, L.W., Turflinger, T.L., Holman, W.T.

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Critical charge for single-event transients (SETs) in bipolar linear circuits von Pease, R.L., Sternberg, A., Massengill, L., Schrimpf, R., Buchner, S., Savage, M., Titus, J., Turflinger, T.

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ELDRS in space: an updated and expanded analysis of the bipolar ELDRS experiment on MPTB von Turflinger, T.L., Campbell, A.B., Schmeichel, W.M., Walters, R.J., Krieg, J.F., Titus, J.L., Reeves, M., Marshall, P.W., Pease, R.L.

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Total-dose hardening of a bipolar-voltage comparator von Pease, R.L., Maher, M.C., Shaneyfelt, M.R., Savage, M.W., Baker, P., Krieg, J., Turflinger, T.L.

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Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS) von Pease, R.L., Gehlhausen, M., Krieg, J., Titus, J., Turflinger, T., Emily, D., Cohn, L.

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Single-event effects in analog and mixed-signal integrated circuits von Turflinger, T.L.

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Origins of total-dose response variability in linear bipolar microcircuits von Barnaby, H.J., Cirba, C.R., Schrimpf, R.D., Fleetwood, D.M., Pease, R.L., Shaneyfelt, M.R., Turflinger, T., Krieg, J.F., Maher, M.C.

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Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response von Barnaby, H.J., Schrimpf, R.D., Pease, R.L., Cole, P., Turflinger, T., Krieg, J., Titus, J., Emily, D., Gehlhausen, M., Witczak, S.C., Maher, M.C., van Nort, D.

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A comprehensive analog single-event transient analysis methodology von Savage, M.W., Titus, J.L., Turflinger, T.L., Pease, R.L., Poivey, C.

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Response Variability in Commercial MOSFET SEE Qualification von George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J. -M., Titus, J., Sivertz, M.

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A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment von Pease, R.L., Cohn, L.M., Fleetwood, D.M., Gehlhausen, M.A., Turflinger, T.L., Brown, D.B., Johnston, A.H.

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