Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface von Cirillo, N.C., Shur, M.S., Vold, P.J., Abrokwah, J.K., Tufte, O.N.

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Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors von Baek, J., Shur, M.S., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.

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New mechanism of gate current in heterostructure insulated gate field-effect transistors von Jun Ho Baek, Shur, M., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.

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Optical techniques for data storage von Tufte, O.N., Chen, D.

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Recent developments in semiconductor piezoresistive devices von Tufte, O.N., Long, D.

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Noise in phosphorus-implanted buried channel MOS transistors von Liu, S.T., Tufte, O.N., van der Ziel, A., Pai, S.Y., Larson, W.

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Mercury cadmium telluride as an infrared detector material von Stelzer, E.L., Schmit, J.L., Tufte, O.N.

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Electronic properties of gray tin single crystals von Ewald, A.W., Tufte, O.N.

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Vapor-deposited polycrystalline silicon solar cells von Heaps, J.D., Tufte, O.N., Nussbaum, A.

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The Pyroelectric Properties of the Lanthanum-Doped Ferroelectric PLZT Ceramics von Liu, S.T., Heaps, J.D., Tufte, O.N.

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