High-Capacitance-Density -GaN Gate Capacitors for High-Frequency Power Integration von Tang, Gaofei, Kwan, M.-H., Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Kevin J.

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Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs' I-V characteristics von CHU, C.-L, HU, C.-M, GONG, J, HUANG, C.-F, TSAI, C.-L, CHEN, F.-Y, LIOU, R.-H, TUAN, H.-C

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Investigation of self-heating induced hot-carrier-injection stress behavior in high-voltage power devices von Huang, Y.-H, Leu, L. Y., Liu, C. C., Lee, Y.-H, Wang, J. S., Mehta, A., Wu, K., Hui-Ting Lu, Po-Chih Su, Jui-Ping Chiang, Chou, H.-L, Jong, Y.-C, Tuan, H.-C

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Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform von Gaofei Tang, Kwan, Alex M. H., Wong, Roy K. Y., Jiacheng Lei, Su, R. Y., Yao, F. W., Lin, Y. M., Yu, J. L., Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Kevin J.

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Investigation of parasitic BJT turn-on enhanced two-stage drain saturation current in high-voltage NLDMOS von Chih-Chang Cheng, Chou, H. L., Chu, F. Y., Liou, R. S., Lin, Y. C., Wu, K. M., Jong, Y. C., Tsai, C. L., Jun Cai, Tuan, H. C.

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Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs' I-V characteristics von Chu, C-L, Hu, C-M, Gong, J, Huang, C-F, Tsai, C-L, Chen, F-Y, Liou, R-H, Tuan, H-C

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Dual-gate a-Si:H thin film transistors von Tuan, H.C., Thompson, M.J., Johnson, N.M., Lujan, R.A.

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Blood pressure screening during the May Measurement Month 2017 programme in Vietnam-South-East Asia and Australasia von Van Minh, H, Viet, NL, Sinh, CT, Hung, PN, Mong Ngoc, NT, Hung, NV, Son, TK, Đong, NT, Thang, ĐC, Tien, HA, Tuan, HC, Beaney, T, Xia, X, Poulter, NR, Schlaich, MP

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Characteristics of two-step continuous deposition of in situ doped and undoped polycrystalline silicon von DAI, C. M, TUAN, H. C

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State-of-the-art device in high voltage power ICs with lowest on-state resistance von Su, R Y, Yang, F J, Tsay, J L, Cheng, C C, Liou, R S, Tuan, H C

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The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layers von TSAI, J.-W, CHENG, H.-C, CHOU, A, SU, F.-C, LUO, F.-C, TUAN, H.-C

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Single-crystal silicon transistors in laser-crystallized thin films on bulk glass von Johnson, N.M., Biegelsen, D.K., Tuan, H.C., Moyer, M.D., Fennell, L.E.

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Design of 700V LIGBT with the suppressed substrate current in a 0.5um junction isolated technology von Su, R. Y., Cheng, C. C., Huo, K. H., Yang, F. J., Tsai, J. L., Liou, R. S., Tuan, H. C.

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Printing applications of a-Si thin film transistors von Tuan, H.C.

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Investigation of voltage-dependent thermal property in high-voltage drain-extended MOSFETs von Chu, Chen-Liang, Hu, C.M., Huang, C.F., Chen, Y.S., Chen, F.Y., Thei, K.B., Hsu, C.C., Yao, C.W., Liou, R.S., Tuan, H.C.

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The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states von CHENG, H.-C, TSAI, J.-W, HUANG, C.-Y, LUO, F.-C, TUAN, H.-C

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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs von Chou, Hsueh-Liang, Su, P. C., Ng, J. C. W., Wang, P. L., Lu, H. T., Lee, C. J., Syue, W. J., Yang, S. Y., Tseng, Y. C., Cheng, C. C., Yao, C. W., Liou, R. S., Jong, Y. C., Tsai, J. L., Cai, Jun, Tuan, H. C., Huang, Chih-Fang, Gong, Jeng

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Edge-bonded surface-acoustic-wave transducer array von Tuan, H. C., Kino, G. S., Khuri-Yakub, B. T., Selfridge, A. R.

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1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations von Grudowski, P., Adams, V., Bo, X.-Z., Loiko, K., Filipiak, S., Hackenberg, J., Jahanbani, M., Azrak, M., Goktepeli, S., Shroff, M., Liang, W.-J., Lian, S., Kolagunta, V., Cave, N., Wu, C.-H., Foisy, M., Tuan, H., Cheek, J.

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Reduction of charge injection into PECVD SiNxHy by control of deposition chemistry von SMITH, D. L, ALIMONDA, A. S, CHAU-CHEN CHEN, TUAN, H. C

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