Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature von Lu, Tien-Chang, Chen, Shih-Wei, Wu, Tzeng-Tsong, Tu, Po-Min, Chen, Chien-Kang, Chen, Cheng-Hung, Li, Zhen-Yu, Kuo, Hao-Chung, Wang, Shing-Chung

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Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers von Lu, Tien-Chang, Wu, Tzeng-Tsong, Chen, Shih-Wei, Tu, Po-Min, Li, Zhen-Yu, Chen, Chien-Kang, Chen, Cheng-Hung, Kuo, Hao-Chung, Wang, Shing-Chung, Zan, Hsiao-Wen, Chang, Chun-Yen

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Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates von Chiu, Ching-Hsueh, Tu, Po-Min, Lin, Chien-Chung, Lin, Da-Wei, Li, Zhen-Yu, Chuang, Kai-Lin, Chang, Jet-Rung, Lu, Tien-Chang, Zan, Hsiao-Wen, Chen, Chiang-Yao, Kuo, Hao-Chung, Wang, Shing-Chung, Chang, Chun-Yen

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Natural substrate lift-off technique for vertical light-emitting diodes von Lee, Chia-Yu, Lan, Yu-Pin, Tu, Po-Min, Hsu, Shih-Chieh, Lin, Chien-Chung, Kuo, Hao-Chung, Chi, Gou-Chung, Chang, Chun-Yen

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Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique von Chiu, Ching-Hsueh, Lin, Chien-Chung, Tu, Po-Min, Huang, Shih-Cheng, Tu, Chia-Cheng, Li, Jin-Chai, Li, Zhen-Yu, Uen, Wu-Yih, Zan, Hsiao-Wen, Lu, Tien-Chang, Kuo, Hao-Chung, Wang, Shing-Chung, Chang, Chun-Yen

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Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier von Tu, Po-Min, Chang, Chun-Yen, Huang, Shih-Cheng, Chiu, Ching-Hsueh, Chang, Jet-Rung, Chang, Wei-Ting, Wuu, Dong-Sing, Zan, Hsiao-Wen, Lin, Chien-Chung, Kuo, Hao-Chung, Hsu, Chih-Peng

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Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser von Chen, Cheng-Chang, Chiu, Ching-Hsueh, Tu, Po-Min, Kuo, Ming-Yen, Shih, M. H, Huang, Ji-Kai, Kuo, Hao-Chung, Zan, Hsiao-Wen, Chang, Chun-Yen

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High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers von Li, Zhen-Yu, Horng, Ray-Hua, Chi, Gou-Chung, Chang, Chun-Yen, Lee, Chia-Yu, Lin, Da-Wei, Lin, Bing-Cheng, Shen, Kun-Ching, Chiu, Ching-Hsueh, Tu, Po-Min, Kuo, Hao-Chung, Uen, Wu-Yih

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High Q microcavity light emitting diodes with buried AlN current apertures von Cheng, Bo-Siao, Wu, Yun-Lin, Lu, Tien-Chang, Chiu, Ching-Hsueh, Chen, Cheng-Hung, Tu, Po-Min, Kuo, Hao-Chung, Wang, Shing-Chung, Chang, Chun-Yen

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The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes von Tsai, Ming-Ta, Chu, Chung-Ming, Huang, Che-Hsuan, Wu, Yin-Hao, Chiu, Ching-Hsueh, Li, Zhen-Yu, Tu, Po-Min, Lee, Wei-I, Kuo, Hao-Chung

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Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance von Huang, Shih-Cheng, Shen, Kun-Ching, Wuu, Dong-Sing, Tu, Po-Min, Kuo, Hao-Chung, Tu, Chia-Cheng, Horng, Ray-Hua

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CW current injection of GaN-based vertical cavity surface emitting laser with hybrid mirrors at room temperature von Tien-Chang Lu, Shih-Wei Chen, Tzeng-Tsong Wu, Chien-Kang Chen, Cheng-Hung Chen, Po-Min Tu, Zhen-Yu Li, Hao-Chung Kuo, Shing-Chung Wang

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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate von Chiu, Ching-Hsueh, Tu, Po-Min, Chang, Shih-Pang, Lin, Chien-Chung, Jang, Chung-Ying, Li, Zhen-Yu, Yang, Hung-Chih, Zan, Hsiao-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Chang, Chun-Yen

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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO 2 Nanorod-Array Depth Patterned Sapphire Substrate von Chiu, Ching-Hsueh, Tu, Po-Min, Chang, Shih-Pang, Lin, Chien-Chung, Jang, Chung-Ying, Li, Zhen-Yu, Yang, Hung-Chih, Zan, Hsiao-Wen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung, Chang, Chun-Yen

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Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser von Chen, Cheng-Chang, Chiu, Ching-Hsueh, Tu, Po-Min, Kuo, Ming-Yen, Shih, M. H., Huang, Ji-Kai, Kuo, Hao-Chung, Zan, Hsiao-Wen, Chang, Chun-Yen

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Investigation of efficiency droop in GaN-based UV LEDs with N-type AlGaN underlayer von Shun-Kuei Yang, Po-Min Tu, Shih-Cheng Huang, Ya-wen Lin, Chih-Peng Hsu, Jet-Rung Chang, Chun-Yen Chang

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Study of efficiency droop in InGaN-based near-UV LEDs with quaternary InAlGaN barrier von Po-Min Tu, Shih-Cheng Huang, Ya-wen Lin, Shun-Kuei Yang, Chih-Peng Hsu, Jet-Rung Chang, Chun-Yen Chang

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Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance von Huang, Shih-Cheng, Shen, Kun-Ching, Wuu, Dong-Sing, Tu, Po-Min, Kuo, Hao-Chung, Tu, Chia-Cheng, Horng, Ray-Hua

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LED Materials: Epitaxy and Quantum Well Structures von Li, Zhen-Yu, Kuo, Hao-Chung, Shieh, Chen-Yu, Chiu, Ching-Hsueh, Tu, Po-Min, Uen, Wu-Yih

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Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier von Ching-Hsueh Chiu, Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Jet-Rung Chang, Hsiao-Wen Zan, Hao-Chung Kuo, Chih-Peng Hsu

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