Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN von Watanabe, K., Yang, J. R., Huang, S. Y., Inoke, K., Hsu, J. T., Tu, R. C., Yamazaki, T., Nakanishi, N., Shiojiri, M.

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Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN von Watanabe, K., Nakanishi, N., Yamazaki, T., Yang, J. R., Huang, S. Y., Inoke, K., Hsu, J. T., Tu, R. C., Shiojiri, M.

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Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes von Saijo, H., Hsu, J. T., Tu, R. C., Yamada, M., Nakagawa, M., Yang, J. R., Shiojiri, M.

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Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells von Tu, R. C., Su, Y. K., Lin, D. Y., Li, C. F., Huang, Y. S., Lan, W. H., Tu, S. L., Chang, S. J., Chou, S. C., Chou, W. C.

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The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces von Tu, R. C., Su, Y. K., Huang, Y. S., Chou, S. T.

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The structural and optical properties of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer von Tu, R. C., Su, Y. K., Chen, H. J., Huang, Y. S., Chou, S. T., Lan, W. H., Tu, S. L.

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Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy von Tu, R. C., Su, Y. K., Li, C. F., Huang, Y. S., Chou, S. T., Lan, W. H., Tu, S. L., Chang, H.

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Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy von Tu, R. C., Su, Y. K., Chou, S. T.

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Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells von LO, Ikai, LEE, K. H, TU, Li-Wei, TSAI, J. K, MITCHEL, W. C, TU, R. C, SU, Y. K

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Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition von Tu, Ru-Chin, Tun, Chun-Ju, Chuo, Chang-Cheng, Lee, Bing-Chi, Tsai, Ching-En, Wang, Te-Chung, Chi, Jim, Lee, Chien-Ping, Chi, Gou-Chung

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Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells von Tu, R. C., Su, Y. K., Chou, S. T.

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Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs von CHEN, H. J, LIN, D. Y, HUANG, Y. S, TU, R. C, SU, Y. K, TIONG, K. K

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High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes von Saijo, Hiroshi, Nakagawa, Mine, Yamada, Mitsuhiko, Hsu, Jung-Tsung, Tu, Ru-Chin, Yang, Jer-Ren, Shiojiri, Makoto

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Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts von Shyi-Ming Pan, Ru-Chin Tu, Yu-Mei Fan, Yeh, R.-C., Jung-Tsung Hsu

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Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer von Tu, R.C, Su, Y.K, Huang, Y.S, Chien, F.R

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Optical properties of ZnSe1−xSx epilayers grown on misoriented GaAs substrates von Chou, W. C., Yang, C. S., Chu, A. H. M., Yeh, A. J., Ro, C. S., Lan, W. H., Tu, S. L., Tu, R. C., Chou, S. C., Su, Y. K., Uen, W. Y.

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Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy von Tu, R.C, Su, Y.K, Lan, W.H, Chien, F.R

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Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers von Tu, R. C., Su, Y. K., Chen, H. J., Huang, Y. S., Chou, S. T.

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Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts von Pan, Shyi-Ming, Tu, Ru-Chin, Fan, Yu-Mei, Yeh, Ruey-Chyn, Hsu, Jung-Tsung

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Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures von Lee, Chien-Chi, Shih, Cheng-Feng, Lee, Chien-Ping, Tu, Ru-Chin, Chuo, Chang-Cheng, Chi, Jim

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