Determination of sapphire crystal melt refractive index in visible range von Bufetova, G.A., Kashin, V.V., Rusanov, S.Ya, Seregin, V.F., Tsvetkov, V.B.

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Dynamics of Er^sup 3+^:YAG thermal radiation spectra near solid-melt interface at single crystal fiber growth process von Bufetova, GA, Rusanov, SYa, Seregin, VF, Pyrkov, YuN, Tsvetkov, VB

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Temperature and emissivity measurements at the sapphire single crystal fiber growth process von Bufetova, G.A., Rusanov, S.Ya, Seregin, V.F., Pyrkov, Yu.N., Tsvetkov, V.B.

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Nature of refractive-index changes in diode pumped Yb:GGG crystal von Nikolaev, D.A., Seregin, V.F., Shcherbakov, I.A., Tsvetkov, V.B.

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Diode-pumped passively Q-switched self-frequency-doubling Nd:YAB laser von Bartschke, J., Boller, K.-J., Wallenstein, R., Klimov, I. V., Tsvetkov, V. B., Shcherbakov, I. A.

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A compact 1.06/1.32/2.94 mu m pulsed laser for dentistry von Yoon, Gilwon, Zabaznov, Alexander M, Tsvetkov, Vladimir B, Kim, Hong S, Shcherbakov, Ivan A

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The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates von Cheng, T.S., Novikov, S.V., Lebedev, V.B., Campion, R.P., Jeffs, N.J., Melnik, Yu.V., Tsvetkov, D.V., Stepanov, S.I., Cherenkov, A.E., Dmitriev, V.A., Korakakis, D., Hughes, O.H., Foxon, C.T.

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Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers von Zakharov, S D, Fyodorov, V B, Tsvetkov, V V

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