0.1-µm-Gate Metamorphic High-Electron-Mobility Transistor on GaAs and Its Application to Source-Coupled Field-Effect Transistor Logic von Ohshima, Tomoyuki, Moriguchi, Hironobu, Hoshi, Shinichi, Itoh, Masanori, Tsunotani, Masanori, Ichioka, Toshihiko

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Double-Recessed 0.1-µm-Gate InP HEMTs for 40 Gbit/s Optical Communication Systems von Hoshi, Shinichi, Moriguchi, Hironobu, Itoh, Masanori, Ohshima, Tomoyuki, Tsunotani, Masanori, Ichioka, Toshihiko

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Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors Formed by Wet Recess Etching von Ohshima, Tomoyuki, Yoshida, Masaaki, Shigemasa, Ryoji, Tsunotani, Masanori, Kimura, Tamotsu

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Schottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition von Ohshima, Tomoyuki, Moriguchi, Hironobu, Shigemasa, Ryoji, Goto, Shu, Tsunotani, Masanori, Kimura, Tamotsu

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0.1-MU M-GATE METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ON GaAs AND ITS APPLICATION TO SOURCE-COUPLED FIELD-EFFECT TRANSISTOR LOGIC von Ohshima, T, Moriguchi, H, Hoshi, S, Itoh, M, Tsunotani, M, Ichioka, T

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DOUBLE-RECESSED 0.1-MU M-GATE InP HEMTs FOR 40 GBIT/S OPTICAL COMMUNICATION SYSTEMS von Hoshi, S, Moriguchi, H, Itoh, M, Ohshima, T, Tsunotani, M, Ichioka, T

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Improvement of 0.1 μm-gate InGaAs/AlGaAs HEMT performance by suppression of electro-chemical etching in deionized water von Ohshima, Tomoyuki, Shigemasa, Ryoji, Sato, Masakatsu, Tsunotani, Masanori, Kimura, Tamotsu

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Method of manufacturing schottky gate field transistor by ion implantation method von TSUNOTANI, MASANORI, SAITO, TADASHI, NAKAMURA, HIROSHI

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A low power electroabsorption modulator driver IC for 10 Gbps optical transmitter von Nishino, A., Ohshima, T., Tsunotani, M., Seki, S., Kimura, T.

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