Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI von Morimoto, T., Ohguro, T., Momose, S., Iinuma, T., Kunishima, I., Suguro, K., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H.

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A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs von Tsuchiaki, M., Hara, H., Morimoto, T., Iwai, H.

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An interface state mediated junction leakage mechanism induced by a single polyhedral oxide precipitate in silicon diode von Tsuchiaki, M., Fujimori, H., Iinuma, T., Kawasaki, A.

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Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n + /p Silicon Diodes von Tsuchiaki, Masakatsu, Ohuchi, Kazuya, Hongo, Chie

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A study of the oxidation slow-down mechanism induced by carbon contamination on silicon surface von TSUCHIAKI, M, BRUNO, A, TSUNASHIMA, Y, WATANABE, T

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Suppression of Thermally Induced Leakage of NiSi-Silicided Shallow Junctions by Pre-Silicide Fluorine Implantation von Tsuchiaki, Masakatsu, Ohuchi, Kazuya, Nishiyama, Akira

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New limits on exotic two-body decay of orthopositronium von Orito, S, Yoshimura, K, Haga, T, Minowa, M, Tsuchiaki, M

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Search for neutral boson in orthopositronium decay von Tsuchiaki, M., Orito, S., Yoshida, T., Minowa, M.

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Impact of reactive ion etching induced carbon contamination on oxidation of silicon von TSUCHIAKI, M, KVITEK, R. J, PARKS, C, MURPHY, R. J, OHIWA, T, WATANABE, T

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SYSTEMATIC INVESTIGATION OF LEAKAGE SUPPRESSION BY PRE-SILICIDE IMPLANTATION FOR CoSi2 FORMATION ON SHALLOW N+/P Si DIODES von Tsuchiaki, M, Murakoshi, A, Hongo, C

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Drastic suppression of thermally induced leakage of NiSi silicided shallow junctions by pre-SALICIDE fluorine implantation von Tsuchiaki, M., Ohuchi, K., Nishiyama, A.

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Search for resonances in the e+e---> gamma gamma process in the mass region around 1.062 MeV/c2 von Minowa, M, Orito, S, Tsuchiaki, M, Tsukamoto, T

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Search for resonances in the e + e − →γγ process in the mass region around 1.062 MeV/ c 2 von Minowa, M., Orito, S., Tsuchiaki, M., Tsukamoto, T.

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Very lightly nitrided oxide gate MOSFETs for deep-sub-micron CMOS devices von Momose, H.S., Morimoto, T., Ozawa, Y., Tsuchiaki, M., Ono, M., Yamabe, K., Iwai, H.

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A NiSi salicide technology for advanced logic devices von Morimoto, T., Momose, H.S., Iinuma, T., Kunishima, I., Suguro, K., Okana, H., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H.

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