Measurement of Channel Temperature in GaN High-Electron Mobility Transistors von Jungwoo Joh, del Alamo, J.A., Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

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Analysis of First-Order Gratings in Silicon Photonic Waveguides von Tan, Haosen, Zhang, Weida, Chen, Yudong, Xia, Yuhe, Newey, Chris, Chou, Tso-Min, Sun, Nai-Hsiang, Butler, Jerome K., Evans, Gary A.

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InAlN Barrier Scaled Devices for Very High f and for Low-Voltage RF Applications von Saunier, Paul, Schuette, Michael L., Tso-Min Chou, Hua-Quen Tserng, Ketterson, Andrew, Beam, Edward, Pilla, Manyam, Xiang Gao

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Corrections to "Analysis of First-Order Gratings in Silicon Photonic Waveguides" von Tan, Haosen, Zhang, Weida, Chen, Yudong, Xia, Yuhe, Newey, Chris, Chou, Tso-Min, Sun, Nai-Hsiang, Butler, Jerome K., Evans, Gary A.

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Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers von Selmic, S.R., Tso-Min Chou, Jiehping Sih, Kirk, J.B., Mantle, A., Butler, J.K., Bour, D., Evans, G.A.

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Development of Ka-Band GaAs pHEMTs with Output Power over 1 W/mm von Dumka, Deep C, Ming-Yih Kao, Beam, Edward, Tso-Min Chou, Hua-Quen Tserng, Fanning, David M

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Phase dependent of DBR gratings von Nai-Hsiang Sun, Chia-Ming Hu, Ping-Hung Lin, Jung-Sheng Chiang, Shih-Chiang Lin, Tso-Min Chou, Butler, J. K., Evans, G. A.

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Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors von Jungwoo Joh, Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.

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InAIN Barrier Scaled Devices for Very High fT and for Low-Voltage RF Applications : GaN ELECTRONIC DEVICES von SAUNIER, Paul, SCHUETTE, Michael L, CHOU, Tso-Min, TSERNG, Hua-Quen, KETTERSON, Andrew, BEAM, Edward, PILLA, Manyam, XIANG GAO

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Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted] von Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul

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Gate-recessed integrated E/D GaN HEMT technology with f T /f max >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token von Schuette, Michael L, Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J, Xing, Huili Grace, Saunier, Paul

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz von Schuette, Michael L., Ketterson, Andrew, Song, Bo, Beam, Edward, Chou, Tso-Min, Pilla, Manyam, Tserng, Hua-Quen, Gao, Xiang, Guo, Shiping, Fay, Patrick J., Xing, Huili Grace, Saunier, Paul

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VERTICAL GALLIUM NITRIDE POWER FIELD-EFFECT TRANSISTOR WITH A FIELD PLATE STRUCTURE von Pilla Subrahmanyam V, Chou Tso-Min

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Design and characterization of 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers von Selmic, S.R., Tso-Min Chou, Jiehping Sih, Kirk, J.B., Mantle, A., Butler, J.K., Bour, D., Evans, G.A.

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Design and characterization of 1.3-[micro]m AlGaInAs-InP multiple-quantum-well lasers von Selmic, S.R, Chou, Tso-Min, Sih, Jiehping, Kirk, J.B, Mantle, A, Butler, J.K, Bour, D, Evans, G.A

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Design and characterization of 1.3-mum AlGaInAs-InP multiple-quantum-well lasers von Selmic, S R, Chou, Tso-Min, Sih, Jiehping, Kirk, J B, Mantle, A, Butler, J K, Bour, D, Evans, G A

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LINEAR HIGH ELECTRON MOBILITY TRANSISTOR von CHOU TSO-MIN, SAUNIER PAUL, TSERNG HUA-QUEN

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Linear high-electron mobility transistor von TSERNG, HUA QUEN, SAUNIER, PAUL, CHOU, TSO MIN

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Linearer Transistor mit hoher Eletronenbeweglichkeit von TSERNG, HUA-QUEN, SAUNIER, PAUL, CHOU, TSO-MIN

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