Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP von DeSalvo, Gregory C., Tseng, Wen F., Comas, James

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Coherent plasma oscillations in bulk semiconductors von Sha, W, Smirl, AL, Tseng, WF

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Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements von KIM, J. S, SEILER, D. G, TSENG, W. F

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Subthreshold characteristics of laterally gated AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors fabricated with focused ion beam implantation von Tseng, Wen F, Monk, David H

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An interdigitated stacked p-i-n multiple-quantum-well modulator von Huang, X.R., Cheung, S.K., Cartwright, A.N., Smirl, A.L., Tseng, W.F.

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Interdigitated hetero InGaAs/GaAs n-i-p-i modulators von Tseng, W.F., Chandler-Horowitz, D., Papanicolaou, N.A., Boos, J.B.

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Planar, Al0.3Ga0.7As-passivated-base, heterojunction bipolar phototransistors von Anderson, G W, Kub, F J, Carruthers, T F, Papanicolaou, N A, Frankel, M Y, Katzer, D S, Modolo, J A, Tseng, W F

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Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's von McCallum, D.S., Cartwright, A.N., Smirl, A.L., Tseng, W.F., Pellegrino, J.G., Comas, J.

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Thermal and chemical stability of Schottky metallization on GaAs von LAU, S. S, CHEN, W. X, MARSHALL, E. D, PAI, C. S, TSENG, W. F, KUECH, T. F

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Direct observations of n-MOSFET channel lengths von TSENG, W. F, WILKINS, B. R

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Formation of epitaxial Si1-xGex films produced by wet oxidation of amorphous SiGe layers deposited on Si(100) von PROKES, S. M, TSENG, W. F, CHRISTOU, A

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Morphology of defects in GaAs revealed by eutectic etch von TSENG, W. F, LESSOFF, H, GORMAN, R

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Transient Radiation Effects in AlGaAs/GaAs MODFETs von Anderson, W. T., Simons, M., Tseng, W. F., Herb, J. A., Bandy, S.

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Solid-state epitaxial growth of deposited Si films von von Allmen, M., Lau, S. S., Mayer, J. W., Tseng, W. F.

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Transient heat transfer from a wire in a violently fluctuating environment von Tseng, W.F., Lin, S.P.

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Characterization of tantalum-silicon films on GaAs at elevated temperatures von Tseng, W.F., Zhang, B., Scott, D., Lau, S.S., Christou, A., Wilkins, B.R.

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Epitaxial growth of Si deposited on (100) Si von Hung, L. S., Lau, S. S., von Allmen, M., Mayer, J. W., Ullrich, B. M., Baker, J. E., Williams, P., Tseng, W. F.

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Theory of a Heat Sensing Velocimeter von Tseng, W. F., Lin, S. P.

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Epitaxial growth of deposited amorphous layer by laser annealing von Lau, S. S., Tseng, W. F., Nicolet, M-A., Mayer, J. W., Eckardt, R. C., Wagner, R. J.

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Simultaneous gettering of Au in silicon by phosphorus and dislocations von Tseng, W. F., Koji, T., Mayer, J. W., Seidel, T. E.

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