Inactivation of viruses by coherent excitations with a low power visible femtosecond laser von Tsen, K T, Tsen, Shaw-Wei D, Chang, Chih-Long, Hung, Chien-Fu, Wu, T-C, Kiang, Juliann G

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Observation of the low frequency vibrational modes of bacteriophage M13 in water by Raman spectroscopy von Tsen, K T, Dykeman, Eric C, Sankey, Otto F, Lin, Nien-Tsung, Tsen, Shaw-Wei D, Kiang, Juliann G

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Enhancement of band gap emission stimulated by defect loss von Lin, H Y, Cheng, C L, Chou, Y Y, Huang, L L, Chen, Y F, Tsen, K T

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Efficient Auger scattering in Landau-quantized graphene von Wendler, Florian, Funk, H., Mittendorff, M., Winnerl, S., Helm, M., Knorr, A., Malic, Ermin

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Picosecond Raman scattering studies of carrier dynamics in InxGa1−xAs1−yNy von Tsen, K T

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Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN von Tsen, K. T., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoc, H.

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Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN von Liang, W., Tsen, K. T., Ferry, D. K., Lu, Hai, Schaff, William J.

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Coherent longitudinal optical phonon and plasmon coupling in the near-surface region of InN von Chang, Y.-M., Chuang, C. T., Chia, C. T., Tsen, K. T., Lu, H., Schaff, W. J.

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Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy von Huang, D., Yun, F., Reshchikov, M.A., Wang, D., Morkoç, H., Rode, D.L., Farina, L.A., Kurdak, Ç., Tsen, K.T., Park, S.S., Lee, K.Y.

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Optical studies of high-field carrier transport of InN thick film grown on GaN von Tsen, K.T., Poweleit, C., Ferry, D.K., Lu, Hai, Schaff, William J.

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Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN von Tsen, K. T., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoç, H.

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Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN von Tsen, K. T., Joshi, R. P., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., Morkoç, H.

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Observation of nonequilibrium longitudinal optical phonons in InN and its implications von Liang, W., Tsen, K. T., Ferry, D. K., Lu, Hai, Schaff, William J.

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Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p–i–n semiconductor nanostructure von Liang, W, Tsen, K T, Poweleit, C, Barker, J M, Ferry, D K, Morkoc, H

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Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures von Liang, W., Tsen, K. T., Sankey, Otto F., Komirenko, S. M., Kim, K. W., Kochelap, V. A., Wu, Meng-Chyi, Ho, Chong-Long, Ho, Wen-Jeng, Morkoç, H.

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Large electric-field induced electron drift velocity observed in an InxGa1−xAs-based p–i–n semiconductor nanostructure at T=300 K von Liang, W., Tsen, K. T., Ferry, D. K., Wu, Meng-Chyi, Ho, Chong-Long, Ho, Wen-Jeng

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Electron-optical-phonon interactions in ultrathin GaAs/AlAs multiple quantum wells von TSEN, K. T, WALD, K. R, RUF, T, YU, P. Y, MORKOC, H

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Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x≅0.6) epilayer grown on GaN von Liang, W., Tsen, K. T., Ferry, D. K., Kim, K. H., Lin, J. Y., Jiang, H. X.

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Picosecond Raman scattering studies of nonequilibrium electron distributions and energy-loss rate in InxGa1−xAs1−yNy von Chen, Y., Tsen, K. T.

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Observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p–i–n semiconductor nanostructure von Liang, W, Tsen, K T, Ferry, D K

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