Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes von Barettin, Daniele, Auf der Maur, Matthias, di Carlo, Aldo, Pecchia, Alessandro, Tsatsulnikov, Andrei F, Lundin, Wsevolod V, Sakharov, Alexei V, Nikolaev, Andrei E, Korytov, Maxim, Cherkashin, Nikolay, Hÿtch, Martin J, Karpov, Sergey Yu

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Wireless network of controlled energy-efficient LED lighting source von Aladov, Andrei V., Valyukhov, Vladimir P., Demin, Sergei V., Zakgeim, Alexander L., Tsatsul'nikov, Andrei F.

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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency von Karpov, S. Yu, Cherkashin, N. A., Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Sinitsin, M. A., Usov, S. O., Zavarin, E. E., Tsatsulnikov, A. F.

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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation von Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V. M.

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Yagovkina, M. A., Ustinov, V. M., Cherkashin, N. A.

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High Luminescence Efficiency from GaAsN Layers Grown by MBE with RF Nitrogen Plasma Source von Ustinov, Victor M, Cherkashin, Nikolai A, Bert, Nikolai A, Tsatsul'nikov, Andrei F, Kovsh, Alexei R

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