Introduction rates of radiation defects in electron irradiated semiconductor crystals of n-Si and n-GaP von Yeritsyan, Hrant N., Sahakyan, Aram A., Grigoryan, Norair E., Harutyunyan, Vachagan V., Arzumanyan, Vika V., Tsakanov, Vasili M., Grigoryan, Bagrat A., Amatuni, Gayane A., Rhodes, Christopher J.

Volltext

Space low earth orbit environment simulator for ground testing materials and devices von Yeritsyan, Hrant N., Sahakyan, Aram A., Grigoryan, Norair E., Harutyunyan, Vachagan V., Arzumanyan, Vika V., Tsakanov, Vasili M., Grigoryan, Bagrat A., Davtyan, Hakob D., Dekhtiarov, Volodymyr S., Rhodes, Christopher J., Assovsky, Igor G.

Volltext

In-Situ Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal von Yeritsyan, Hrant N., Sahakyan, Aram A., Grigoryan, Norair E., Harutyunyan, Vachagan V., Arzumanyan, Vika V., Tsakanov, Vasili M., Grigoryan, Bagrat A., Amatuni, Gayane A.

Volltext

The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal von Yeritsyan, Hrant N., Sahakyan, Aram A., Grigoryan, Norair E., Hakhverdyan, Eleonora A., Harutyunyan, Vachagan V., Hovhannisyan, Agasi S., Sahakyan, Vahan A., Khachatryan, Armenuhi A., Grigoryan, Bagrat A., Hakobyan, Laura S., Amatuni, Gayane A., Vardanyan, Ashot S., Tsakanov, Vasili M.

Volltext